STM8L052R8 datasheet(71/109 Pages) STMICROELECTRONICS

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STM8L052R8

Electrical parameters

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Figure 14.

Typical IDD(AH) vs. VDD (LSI clock source)

No floating I/O, unless otherwise specified.

RTC enabled. Clock source = LSI

RTC enabled, LCD enabled with external VLCD = 3 V, static duty, division ratio = 256, all pixels active, no LCD connected.

RTC enabled, LCD enabled with external VLCD, 1/4 duty, 1/3 bias, division ratio = 64, all pixels active, no LCD connected.

LCD enabled with internal LCD booster VLCD = 3 V, 1/4 duty, 1/3 bias, division ratio = 64, all pixels active, no LCD

connected.

Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption

(IDD LSE) must be added. Refer to Table 29

RTC enabled. Clock source = LSE

Wakeup time until start of interrupt vector fetch.

The first word of interrupt routine is fetched 4 CPU cycles after tWU.

ULP=0 or ULP=1 and FWU=1 in the PWR_CSR2 register.

Table 22.

Typical current consumption in Active-halt mode, RTC clocked by LSE external crystal

Symbol

Parameter

Condition(1)

Typ.

Unit

IDD(AH)

(2)

Supply current in Active-halt

mode

VDD = 1.8 V

LSE

1.2

µA

LSE/32(3)

0.9

VDD = 3 V

LSE

1.4

LSE/32(3)

1.1

VDD = 3.6 V

LSE

1.6

LSE/32(3)

1.3

No floating I/O, unless otherwise specified.

Based on measurements on bench with 32.768 kHz external crystal oscillator.

RTC clock is LSE divided by 32.

0.005

0.01

0.015

0.02

1.8

2.2

2.4

2.6

2.8

3.2

3.4

3.6

VDD (V)

25°C

85°C

-40°C

MS19117V2

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