LM4931ITLSLASHNOPB datasheet(3/50 Pages) TI2

3 / 50 page

LM4931

www.ti.com

SNAS251E – APRIL 2004 – REVISED MAY 2013

PIN DESCRIPTIONS

PIN NAME

D/A

I/O

DESCRIPTION

MIC_P

Microphone positive differential input

MIC_N

Microphone negative differential input

VDD(MIC)

Analog Vdd for microphone section

MODE

Selects between SPI and I2C control interfaces (I2C = 0, SPI = 1)

SDA/SDI

I/O

I2C_SDA or SPI_SDI depending on the MODE control

N/A

No Connect

MIC_P

Microphone positive differential input

MIC_BIAS

2V ultra clean power supply for microphones

BYPASS

Click and Pop / VDD/2 reference filter

ADDR/ENB

I2C_ADDR or SPI_ENB depending on the MODE control

SCL/SCK

I2C_SCL or SPI_SCK depending on the MODE control

PCM_SDI

PCM_SDI voice data input

VSS(MIC)

Analog Vss for microphone section

MIC_REF

Filter for microphone power supply

N/A

No Connect

PCM_SDO

PCM_SDO serial data output

PCM_SYNC

I/O

PCM_SYNC pulse for the PCM bus

PCM-CLK

I/O

PCM_SYNC pulse for the PCM bus

HPL

Left Headphone output

VSS(HP)

Analog Vss for Headphone and Mixer sections

VSS(HP)

Analog Vss for Headphone and Mixer sections

I2S_SDI

I2S serial data input

I2S_CLK

I/O

I2S clock signal

VSSD

Digital Vss

VDD(HP)

Analog Vdd for Headphone and Mixer sections

HPR

Right Headphone output

GPIO

Configurable multi purpose output

I2S_WS

I/O

I2S word select signal

MCLK

Input clock from 10MHz - 24.576MHz

VDDD

Digital Vdd

LS+

Loudspeaker positive output

VDD(LS)

Analog Vdd for Loudspeaker section

HP_SENSE

Input for headphone connection sense circuit

N/A

No Connect

PLL_OUT

PLL filter output

VDD(PLL)

Digital Vdd for PLL section

LS+

Loudspeaker positive output

VSS(LS)

Analog Vss for Loudspeaker section

LS-

Loudspeaker negative output

VSS(PLL)

Digital Vss for PLL section

PLL_IN

PLL filter input

VDD(PLL)

Digital Vdd for PLL section

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

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