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LMK05028RGCT.B Datasheet(PDF) 69 Page - Texas Instruments |
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LMK05028RGCT.B Datasheet(HTML) 69 Page - Texas Instruments |
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69 / 94 page ![]() 7.5.8 Read EEPROM The contents of the EEPROM can be read back, one word at a time, starting with that of the requested address through the following sequence. This sequence can be used to verify the contents written to EEPROM after an EEPROM program cycle. 1. Write the most significant 5 bit of the EEPROM address in R169 (MEMADR byte 1) and write the least significant 8 bits of the EEPROM address in R170 (MEMADR byte 0). 2. The EEPROM data located at the address specified in the step above can be obtained by reading R171 (NVMDAT byte) in the same register transaction. • Any additional access that is part of the same transaction causes the EEPROM address to be incremented and a read takes place of the next EEPROM address. • Byte or Block read transfers from R171 can be used to read the entire EEPROM map sequentially from Byte 0 to 508 (509 bytes total). • Access to EEPROM terminates at the end of current register transaction. www.ti.com LMK05028 SNAS724B – FEBRUARY 2018 – REVISED FEBRUARY 2025 Copyright © 2025 Texas Instruments Incorporated Submit Document Feedback 69 Product Folder Links: LMK05028 |
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