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STM8S105C4B3 Datasheet(PDF) 103 Page - STMicroelectronics |
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STM8S105C4B3 Datasheet(HTML) 103 Page - STMicroelectronics |
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103 / 127 page ![]() Table 48: EMS data Level/ class Conditions Parameter Symbol 2/B (1) VDD = 3.3 V, TA = 25 °C, fMASTER = 16 MHz (HSI clock), conforming to IEC 61000-4-2 Voltage limits to be applied on any I/O pin to induce a functional disturbance VFESD 4/A (1) VDD= 3.3 V, TA = 25 °C ,fMASTER = 16 MHz (HSI clock),conforming to IEC 61000-4-4 Fast transient voltage burst limits to be applied through 100 pF on VDD VEFTB and VSS pins to induce a functional disturbance (1)Data obtained with HSI clock configuration, after applying HW recommendations described in AN2860 (EMC guidelines for STM8S microcontrollers). Electromagnetic interference (EMI) 10.3.12.3 Emission tests conform to the IEC61967-2 standard for test software, board layout and pin loading. Table 49: EMI data Unit Conditions Parameter Symbol Max fHSE/fCPU (1) Monitored frequency band General conditions 8 MHz/ 16 MHz 8 MHz/ 8 MHz dBµV 14 13 0.1 MHz to 30 MHz VDD = 5 V, TA = +25 °C, Peak level SEMI 19 23 30 MHz to 130 MHz LQFP48 package conforming to IEC61967-2 -4 -4 130 MHz to 1 GHz — 1.5 2 SAE EMI level (1) Data based on characterization results, not tested in production. 103/127 DocID14771 Rev 9 Electrical characteristics STM8S105xx |
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