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STM8S105C4B3 Datasheet(PDF) 104 Page - STMicroelectronics |
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STM8S105C4B3 Datasheet(HTML) 104 Page - STMicroelectronics |
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104 / 127 page ![]() Absolute maximum ratings (electrical sensitivity) 10.3.12.4 Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) 10.3.12.5 Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test conforms to the JESD22-A114A/A115A standard. For more details, refer to the application note AN1181. Table 50: ESD absolute maximum ratings Unit Maximum value (1) Class Conditions Ratings Symbol V 2000 A TA = +25°C, conforming to JESD22-A114 Electrostatic discharge voltage (Human body model) VESD(HBM) V 1000 IV TA=+25°C, conforming to JESD22-C101 Electrostatic discharge voltage (Charge device model) VESD(CDM) (1) Data based on characterization results, not tested in production Static latch-up 10.3.12.6 Two complementary static tests are required on 10 parts to assess the latch-up performance: • A supply overvoltage (applied to each power supply pin) • A current injection (applied to each input, output and configurable I/O pin) are performed on each sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the application note AN1181. Table 51: Electrical sensitivities Class (1) Conditions Parameter Symbol A TA = +25 °C Static latch-up class LU A TA = +85 °C A TA = +125 °C DocID14771 Rev 9 104/127 STM8S105xx Electrical characteristics |
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