STM8S105C4B3 datasheet(126/127 Pages) STMICROELECTRONICS

126 / 127 page

Changes

Revision

Date

Option bytes: added description of STM8L bootloader option

bytes to the option byte description table.

Added Unique ID

Operating conditions: added introductory text; removed low

power dissipation condition for TA, replaced "CEXT" by "VCAP",

and added ESR and ESL data in table "general operating

conditions".

Total current consumption in halt mode: replaced max value

of IDD(H) at 85 °C from 20 µA to 25 µA for the condition "Flash

in powerdown mode, HSI clock after wakeup in the table "total

current consumption in halt mode at VDD = 5 V.

Low power mode wakeup times: added first condition (0 to 16

MHz) for the tWU(WFI) parameter in the table "wakeup times".

Internal clock sources and timing characteristics: In the table

"HSI oscillator characteristics", replaced min and max values

of "ACCHSI factory calibrated parameter" and removed footnote

4 concerning further characterization of results.

Functional EMS (electromagnetic susceptibility): IEC 1000

replaced with IEC 61000.

Designing hardened software to avoid noise problems: IEC

1000 replaced with IEC 61000.

Electromagnetic interference (EMI): SAE J 1752/3 replaced

with IEC61967-2.

Thermal characteristics: Replaced the thermal resistance

junction ambient temperature of LQFP32 7X7 mm from 59 °C

to 60 °C in the thermal characteristics table.

Added 32-lead UFQFPN package mechanical data.

Added STM8S105 FASTROM microcontroller option list.

DocID14771 Rev 9

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STM8S105xx

Revision history

STM8S105C4B3 Datasheet(PDF) 126 Page - STMicroelectronics