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AS4DDR264M72PBG1-3/XT Datasheet(PDF) 9 Page - Micross Components

Part # AS4DDR264M72PBG1-3/XT
Description  Proprietary Enchanced Die Stacked iPEM
PDF  28 Pages
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Manufacturer  MICROSS [Micross Components]
Direct Link  http://www.micross.com
Logo MICROSS - Micross Components

AS4DDR264M72PBG1-3/XT Datasheet(HTML) 9 Page - Micross Components

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iPEM
4.8 Gb SDRAM-DDR2
AS4DDR264M72PBG1
AS4DDR264M72PBG1
Rev. 3.1 01/10
9
Micross Components reserves the right to change products or specifications without notice.
CAS LATENCY (CL)
The CAS latency (CL) is defined by bits M4-M6, as shown
in Figure 5. CL is the delay, in clock cycles, between the
registration of a READ command and the availability of the first
bit of output data. The CL can be set to 3, 4, 5, 6 or 7 clocks,
depending on the speed grade option being used.
DDR2 SDRAM does not support any half-clock latencies.
Reserved states should not be used as unknown operation
or incompatibility with future versions may result.
DDR2 SDRAM also supports a feature called posted CAS
additive latency (AL). This feature allows the READ command
to be issued prior to tRCD (MIN) by delaying the
internal command to the DDR2 SDRAM by AL clocks.
Examples of CL = 3 and CL = 4 are shown in Figure 6; both
assume AL = 0. If a READ command is registered at clock
edge n, and the CL is m clocks, the data will be available
nominally coincident with clock edge n+m (this assumes
AL = 0).
FIGURE 6 - CAS LATENCY (CL)
Notes:
1. BL = 4.
2. Posted CAS# additive latency (AL) = 0.
3. Shown with nominal tAC, tDQSCK, and tDQSQ.
Extended Mode Register (EMR)
DO
n + 3
DO
n + 2
DO
n + 1
CK
CK#
Command
DQ
DQS, DQS#
CL = 3 (AL = 0)
READ
T0
T1
T2
Don’t care
Transitioning data
NOP
NOP
NOP
DO
n
T3
T4
T5
NOP
NOP
T6
NOP
DO
n + 3
DO
n + 2
DO
n + 1
CK
CK#
Command
DQ
DQS, DQS#
CL = 4 (AL = 0)
READ
T0
T1
T2
NOP
NOP
NOP
DO
n
T3
T4
T5
NOP
NOP
T6
NOP



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