HT45F5N datasheet(20/202 Pages) HOLTEK

20 / 202 page

Rev. 1.00

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Rev. 1.00

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HT45F5N/HT45FH5N

Power Bank ASSP Flash MCU

HT45F5N/HT45FH5N

Power Bank ASSP Flash MCU

Slew Rate Control Characteristics

Ope�ating Te�pe�atu�e: -40°C ~ �5°C� unless othe�wise specify

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VDD

Conditions

IOL

PB0~PB3 Po�ts Sink Cu��ent

VOL = 0.�VDD

�4

�0

—

�A

�0

150

—

�A

IOH

PB0~PB3 Sou�ce Cu��ent

VOH = 0.�VDD

-�4

-�0

—

�A

-�0

-150

—

�A

SRRISE

Output Rising edge Slew Rate fo�

PB0~PB3 Po�ts

SLEWCn[�+1� �] = 00B

(n = 0�1; � = 0 o� �)

0.5V to 4.5V� CLOAD = 1000pF

�00

—

V/μs

SLEWCn[�+1� �] = 01B

(n = 0�1; � = 0 o� �)

0.5V to 4.5V� CLOAD = 1000pF

�0

V/μs

SLEWCn[�+1� �] = 10B

(n = 0�1; � = 0 o� �)

0.5V to 4.5V� CLOAD = 1000pF

�5

V/μs

SLEWCn[�+1� �] = 11B

(n = 0�1; � = 0 o� �)

0.5V to 4.5V� CLOAD = 1000pF

3�

V/μs

SRFALL

Output Falling edge Slew Rate fo�

PB0~PB3 Po�ts

SLEWCn[�+1� �] = 00B

(n = 0�1; � = 0 o� �)

4.5V to 0.5V� CLOAD = 1000pF

�00

—

V/μs

SLEWCn[�+1� �] = 01B

(n = 0�1; � = 0 o� �)

4.5V to 0.5V� CLOAD = 1000pF

�0

V/μs

SLEWCn[�+1� �] = 10B

(n = 0�1; � = 0 o� �)

4.5V to 0.5V� CLOAD = 1000pF

�5

V/μs

SLEWCn[�+1� �] = 11B

(n = 0�1; � = 0 o� �)

4.5V to 0.5V� CLOAD = 1000pF

3�

V/μs

HT45F5N Datasheet(PDF) 20 Page - Holtek Semiconductor Inc

HT45F5N Datasheet(HTML) 20 Page - Holtek Semiconductor Inc

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