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SLG46867MTR Datasheet(PDF) 6 Page - Renesas Technology Corp |
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SLG46867MTR Datasheet(HTML) 6 Page - Renesas Technology Corp |
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6 / 209 page ![]() Datasheet 28-Feb-2023 CFR0011-120-00 Revision 3.21 Page 6 of 208 © 2023 Renesas Electronics Corporation SLG46867 GreenPAK Programmable Mixed-Signal Matrix with Dual 44 m Ω/2 A P-FET Figure 113: Typical Switching Waveforms (Resistive Load, RL = 100 W, VDD = VIN = 1.71 V) ............................................134 Figure 114: Power Dissipation Derating Curve ...................................................................................................................... 135 Figure 115: Typical Output Characteristics ............................................................................................................................ 136 Figure 116: Drain-Source On-Resistance vs. Drain Current .................................................................................................. 136 Figure 117: Typical Drain-Source On-Resistance vs. Ambient Temperature ........................................................................ 136 Figure 118: Gate-Source On-Resistance Gate-Source Voltage ............................................................................................ 136 Figure 119: Drain Current vs. Gate-Source Voltage ..............................................................................................................137 Figure 120: Typical Forward Transconductance ....................................................................................................................137 Figure 121: Typical Drain-Source Diode Forward Voltage..................................................................................................... 137 Figure 122: Gate Threshold Voltage vs Ambient Temperature.............................................................................................. 137 Figure 123: Zero Gate Voltage Drain Current ........................................................................................................................ 138 Figure 124: Gate-Body Leakage vs. Ambient Temperature...................................................................................................138 Figure 125: Typical Switching Time (Internal Gate Drive) at VDS = 1.71 V............................................................................138 Figure 126: Typical Switching Time (Internal Gate Drive) at VDS = 5.5 V..............................................................................138 Figure 127: Typical Gate Input Waveform, Internal Gate Drive Source (Switching Time Test) ............................................. 139 Figure 128: Typical Gate Charge vs. Gate-Source Voltage ...................................................................................................139 Figure 129: Typical Capacitance vs. Drain-Source Voltage...................................................................................................139 |
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