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VSC8541XMV-05 Datasheet(PDF) 76 Page - Microchip Technology |
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VSC8541XMV-05 Datasheet(HTML) 76 Page - Microchip Technology |
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76 / 101 page  Electrical Specifications VMDS-10513 VSC8541-02 Datasheet Revision 4.1 67 The on-die thermal diode requires an external thermal sensor, located on the board or in a stand-alone measurement kit. Temperature measurement using a thermal diode is very sensitive to noise. The following illustration shows a generic application design. Figure 23 • Thermal Diode Note: Microsemi does not support or recommend operation of the thermal diode under reverse bias. The following table provides the diode parameter and interface specifications with the pins connected internally to VSS in the device. The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by the diode equation: where, IS = saturation current, q = electronic charge, VD = voltage across the diode, k = Boltzmann constant, and T = absolute temperature (Kelvin). 5.2 AC Characteristics This section provides the AC specifications for the VSC8541-02 device. 5.2.1 Reference Clock The following table lists the AC specifications for the REFCLK reference clock. Table 97 • Thermal Diode Parameters Parameter Symbol Typical Maximum Unit Forward bias current IFW See note1 1. Typical value is device dependent. 1mA Diode ideality factor n 1.008 Table 98 • RefClk Parameter Symbol Minimum Typical Maximum Unit Condition REFCLK frequency, REFCLK_SEL[1:0]= 11 ƒ –100 ppm 125 100 ppm MHz REFCLK frequency, REFCLK_SEL[1:0]= 10 ƒ –100 ppm 50 100 ppm MHz REFCLK frequency, REFCLK_SEL[1:0]= 01 ƒ –100 ppm 25 100 ppm MHz Rise time and fall time tR, tF 1.5 ns 20% to 80%, 5.1 pF load Duty cycle 45 55 % Phase jitter—Gaussian 4 psRMS Bandwidth from 10 kHz to 10 MHz Microsemi Die Cell Temperature Diode External Device 2200 pF Anode Cathode Anode Cathode Isolated Sensor Circuit D+ D– Microsemi Die Cell Temperature Diode External Device 2200 pF Grounded Sensor Circuit DXP GND IFW IS e qVD () nkT () ⁄ 1 – () = |
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