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LM5177DCPR Datasheet(PDF) 11 Page - Texas Instruments |
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LM5177DCPR Datasheet(HTML) 11 Page - Texas Instruments |
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11 / 60 page ![]() Typical values correspond to TJ=25°C. Minimum and maximum limits apply over TJ=-40°C to 125℃. Unless otherwise stated, V(BIAS) =12 V PARAMETER MIN TYP MAX UNIT nFLT off-state leakage V(nFLT)=5V 100 nA td(nFLT-PIN) nFLT pin reaction time Measured from a fault event until nFLT goes low 37 µs MOSFET DRIVER tr Rise time HG1, HG2, LG1, LG2 CG = 3.3nF 12 ns tf Fall time HG1, HG2, LG1, LG2 CG = 3.3nF 12 ns tt Dead-time HOx from High to Low and LOx from Low to High CG = 3.3nF R(RT) = 14.7 kΩ 19 ns HOx from Low to High and LOx from High to Low 20.5 ns HOx from High to Low and LOx from Low to High R(RT) = 316 k Ω 21.5 ns HOx from Low to High and LOx from High to Low 23 ns Gate driver low side PMOS on-resistance LO1, LO2 I(test) = 200 mA 1.6 Ω Gate driver high side PMOS on-resistance HO1, HO2 I(test) = 200 mA 1.3 Ω Gate driver low side NMOS on-resistance LO1, LO2 I(test) = 200 mA 0.6 Ω Gate driver high side NMOS on-resistance HO1, HO2 I(test) = 200 mA 0.7 Ω VTH- (BST_UV) Negative going boot-strap V(HBx) - V(SWx) falling 2.4 2.8 3.1 V VTH+ (BST_UV) Positive going boot-strap V(HBx) - V(SWx) rising 2.6 3 3.35 V VTH+ (BST_OV) Positive going boot-strap over-voltage threshold Positive going boot- strap over- voltage threshold V(HBx) - V(SWx) rising, I(HBx)=25uA 4.8 5.5 6.3 V VTH (GATEOUT) Low/High Side Gate driver output switching detection referenced to VCC 37 % referenced to V(HBx) - V(SWx) 37 % THERMAL SHUTDOWN TT+J Thermal shutdown threshold Thermal shutdown threshold TJ rising 164 °C Thermal shutdown hysteresis Thermal shutdown hysteresis 15 °C www.ti.com LM5177 SNVSBU4F – JUNE 2022 – REVISED JANUARY 2025 Copyright © 2025 Texas Instruments Incorporated Submit Document Feedback 11 Product Folder Links: LM5177 |
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