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ST10F272M Datasheet(PDF) 40 Page - STMicroelectronics |
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ST10F272M Datasheet(HTML) 40 Page - STMicroelectronics |
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40 / 176 page ![]() Internal Flash memory ST10F272M 40/176 Doc ID 12968 Rev 3 Example of indirect addressing mode MOV RWm, #ADDRESS; /*Load Add in RWm*/ MOV RWn, #DATA; /*Load Data in RWn*/ MOV [RWm], RWn; /*Indirect addressing*/ Word program Example: 32-bit word program of data 0xAAAAAAAA at address 0x025554 FCR0H|= 0x2000; /*Set WPG in FCR0H*/ FARL = 0x5554; /*Load Add in FARL*/ FARH = 0x0002; /*Load Add in FARH*/ FDR0L = 0xAAAA; /*Load Data in FDR0L*/ FDR0H = 0xAAAA; /*Load Data in FDR0H*/ FCR0H|= 0x8000; /*Operation start*/ Double word program Example: Double word program (64-bit) of data 0x55AA55AA at address 0x035558 and data 0xAA55AA55 at address 0x03555C in IFlash module. FCR0H |= 0x1000; /*Set DWPG/ FARL = 0x5558; /*Load Add in FARL*/ FARH = 0x0003; /*Load Add in FARH*/ FDR0L = 0x55AA; /*Load Data in FDR0L*/ FDR0H = 0x55AA; /*Load Data in FDR0H*/ FDR1L = 0xAA55; /*Load Data in FDR1L*/ FDR1H = 0xAA55; /*Load Data in FDR1H*/ FCR0H |= 0x8000; /*Operation start*/ Double word program is always performed on the double word aligned on an even word: bit ADD2 of FARL is ignored. Sector erase Example: Sector erase of sectors B0F1 and B0F0 of Bank 0 in IFlash module. FCR0H |= 0x0800; /*Set SER in FCR0H*/ FCR1L |= 0x0003; /*Set B0F1, B0F0*/ FCR0H |= 0x8000; /*Operation start*/ Suspend and resume Word program, double word program, and sector erase operations can be suspended in the following way: FCR0H |= 0x4000; /*Set SUSP in FCR0H*/ Then the operation can be resumed in the following way: FCR0H |= 0x0800; /*Set SER in FCR0H*/ FCR0H |= 0x8000; /*Operation resume*/ Before resuming a suspended erase, FCR1H/FCR1L must be read to check if the erase is already completed (FCR1H = FCR1L = 0x0000 if erase is complete). Original setup of select operation bits in FCR0H/L must be restored before the operation resume, otherwise the operation is aborted and bit RESER of FER is set. |
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