UPD75P3018A datasheet(32/66 Pages) RENESAS

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µPD75P3018A

Data Sheet U11917EJ2V1DS

8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY

The program memory contained in the

µPD75P3018A is a 32768 × 8-bit one-time PROM that can be electrically written

one time only. The pins listed in the table below are used for this one-time PROM’s write/verify operations. Clock input

from the X1 pin is used instead of address input as a method for updating addresses.

Function

VPP

Pin where program voltage is applied during program memory

write/verify (usually VDD potential)

X1, X2

Clock input pins for address updating during program memory

write/verify. Input the X1 pin’s inverted signal to the

X2 pin.

MD0-MD3

Operation mode selection pin for program memory write/verify

D0/P40 to D3/P43

8-bit data I/O pins for program memory write/verify

(low-order 4 bits)

D4/P50 to D7/P53

(high-order 4 bits)

VDD

Pin where power supply voltage is applied.

Applies VDD = 1.8 to 5.5 V in normal operation mode and +6 V

for program memory write/verify.

Caution

Pins not used for program memory write/verify should be connected to VSS via a resistor individually.

8.1 Operation Modes for Program Memory Write/Verify

When +6 V is applied to the VDD pin and +12.5 V to the VPP pin, the

µPD75P3018A enters the program memory write/verify

mode. The following operation modes can be specified by setting pins MD0 to MD3 as shown below.

Operation Mode Specification

Operation Mode

VPP

VDD

MD0

MD1

MD2

MD3

+12.5 V

+6 V

Zero-clear program memory address

Write mode

LLH

Verify mode

Program inhibit mode

X: L or H

UPD75P3018A Datasheet(PDF) 32 Page - Renesas Technology Corp

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