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UPD75P3018A Datasheet(PDF) 38 Page - Renesas Technology Corp |
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UPD75P3018A Datasheet(HTML) 38 Page - Renesas Technology Corp |
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38 / 66 page ![]() µPD75P3018A 36 Data Sheet U11917EJ2V1DS Subsystem Clock Oscillator Characteristics (TA = –40 to +85 °C, VDD = 1.8 to 5.5 V) Resonator Recommended Circuit Parameter Conditions MIN. TYP. MAX. Unit Crystal Oscillation frequency 32 32.768 35 kHz resonator (fXT)Note 1 Oscillation VDD = 4.5 to 5.5 V 1.0 2 s stabilization timeNote 2 10 External XT1 input frequency 32 100 kHz clock (fXT)Note 1 XT1 input high-/ 5 15 µs low-level width (tXTH, tXTL) Notes 1. The oscillation frequency and XT1 input frequency shown above indicate characteristics of the oscillator only. For the instruction execution time, refer to AC Characteristics. 2. The oscillation stabilization time is the time required for oscillation to be stabilized after VDD has been applied. Caution When using the subsystem clock oscillator , wire the portion enclosed in the broken line in the above figure as follows to prevent adverse influence due to wiring capacitance: • Keep the wiring length as short as possible. • Do not cross the wiring with other signal lines. • Do not route the wiring in the vicinity of a line through which a high alternating current flows. • Always keep the ground point of the capacitor of the oscillator at the same potential as VDD. • Do not ground to a power supply pattern through which a high current flows. • Do not extract signals from the oscillator. The subsystem clock oscillator has a low amplification factor to reduce current consumption and is more susceptible to noise than the main system clock oscillator. Therefore, exercise utmost care in wiring the subsystem clock oscillator. Remark For the resonator selection and oscillator constant, customers are requested to either evaluate the oscillation themselves or apply to the resonator manufacturer for evaluation. XT1 XT2 C3 C4 R VDD XT1 XT2 |
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