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UPSD3312D Datasheet(PDF) 191 Page - STMicroelectronics

Part # UPSD3312D
Description  fast 8032 MCU with programmable logic
PDF  272 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

UPSD3312D Datasheet(HTML) 191 Page - STMicroelectronics

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During a Bulk Erase operation, the Flash memory does not accept any other Flash
instruction sequences.
27.4.16
Flash Sector Erase
The Sector Erase instruction sequence uses six WRITE operations, as described in
Table 117 on page 184. Additional Flash Sector Erase commands to other sectors within the
same Flash array may be issued by the 8032 if the additional commands are sent within a
limited amount of time.
The Erase Timeout Flag Bit (DQ3) reflects the timeout period allowed between two
consecutive sector erase instruction sequence bytes. If multiple sector erase commands are
desired, the additional sector erase commands (30h) must be sent by the 8032 to another
sector within 80µs after the previous sector erase command. DQ3 is 0 before this time
period has expired, indicating it is OK to issue additional sector erase commands. DQ3 will
go to logic ’1’ if the time has been longer than 80µs since the previous sector erase
command (time has expired), indicating that is not OK to send another sector erase
command. In this case, the 8032 must start a new sector erase instruction sequence (unlock
and command), beginning again after the current sector erase operation has completed.
During a Sector Erase operation, the memory status may be checked by reading the Error
Flag Bit (DQ5), the Toggle Flag Bit (DQ6), and the Data Polling Flag Bit (DQ7), as detailed in
Section 27.4.5: Reading the erase/program status bits on page 185.
During a Sector Erase operation, a Flash memory accepts only Reset Flash and Suspend
Sector Erase instruction sequences. Erasure of one Flash memory sector may be
suspended, in order to read data from another Flash memory sector, and then resumed.
The address provided with the initial Flash Sector Erase command sequence (Table 117 on
page 184) must select the first desired sector (FSx or CSBOOTx) to erase. Subsequent
sector erase commands that are appended within the timeout period must be addressed to
other desired segments within the same Flash memory array.
27.4.17
Suspend sector erase
When a Sector Erase operation is in progress, the Suspend Sector Erase instruction
sequence can be used to suspend the operation by writing B0h to any valid address within
the Flash array that currently is undergoing an erase operation. This allows reading of data
from a different Flash memory sector within the same array after the Erase operation has
been suspended. Suspend Sector Erase is accepted only during an Erase operation.
There is up to 15µs delay after the Suspend Sector Erase command is accepted and the
array goes to Read Array mode. The 8032 will monitor the Toggle Flag Bit (DQ6) to
determine when the erase operation has halted and Read Array mode is active.
If a Suspend Sector Erase instruction sequence was executed, the following rules apply:
●
Attempting to read from a Flash memory sector that was being erased outputs invalid
data.
●
Reading from a Flash memory sector that was not being erased is valid.
●
The Flash memory cannot be programmed, and only responds to Resume Sector
Erase and Reset Flash instruction sequences.
●
If a Reset Flash instruction sequence is received, data in the Flash memory sector that
was being erased is invalid.



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