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SPC564A80L7 Datasheet(PDF) 94 Page - STMicroelectronics |
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SPC564A80L7 Datasheet(HTML) 94 Page - STMicroelectronics |
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94 / 157 page ![]() Electrical characteristics SPC564A74L7, SPC564A80B4, SPC564A80L7 94/157 Doc ID 15399 Rev 9 3.6.2 Recommended power transistors The following NPN transistors are recommended for use with the on-chip voltage regulator controller: ON SemiconductorTM BCP68T1 or NJD2873 as well as Philips SemiconductorTM BCP68. The collector of the external transistor is preferably connected to the same voltage supply source as the output stage of the regulator. 3.7 Power up/down sequencing There is no power sequencing required among power sources during power up and power down, in order to operate within specification. Although there are no power up/down sequencing requirements to prevent issues such as latch-up or excessive current spikes the state of the I/O pins during power up/down varies according to Table 19 for all pins with fast pads, and Table 20 for all pins with medium, slow, and multi-voltage pads. Table 18. Recommended operating characteristics Symbol Parameter Value Unit hFE () DC current gain (Beta) 60 – 550 — PD Absolute minimum power dissipation >1.0 (1.5 preferred) W ICMaxDC Minimum peak collector current 1.0 A VCESAT Collector-to-emitter saturation voltage 200 – 600(1) 1. Adjust resistor at bipolar transistor collector for 3.3 V/5.0 V to avoid VCE < VCESAT. mV VBE Base-to-emitter voltage 0.4 – 1.0 V Table 19. Power sequence pin states (fast pads) VDDE VRC33 VDD Pad State LOW X X LOW VDDE LOW X HIGH VDDE VRC33 LOW HIGH IMPEDANCE VDDE VRC33 VDD FUNCTIONAL Table 20. Power sequence pin states (medium, slow, and multi-voltage pads) VDDEH VDD Pad State LOW X LOW VDDEH LOW HIGH IMPEDANCE VDDEH VDD FUNCTIONAL |
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