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SST26VF016B-104V/SN Datasheet(PDF) 28 Page - Microchip Technology

Part # SST26VF016B-104V/SN
Description  2.5V/3.0V 16-Mbit Serial Quad I/O™ (SQI™) Flash Memory
PDF  84 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST26VF016B-104V/SN Datasheet(HTML) 28 Page - Microchip Technology

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SST26VF016B
DS20005262G-page 28
2014-2022 Microchip Technology Inc. and its subsidiaries
5.20 Page Program
The Page Program instruction programs up to
256 bytes of data in the memory and supports both SPI
and SQI protocols. The data for the selected page
address must be in the erased state (FFH) before initi-
ating the Page Program operation. A Page Program
applied to a protected memory area will be ignored.
Prior to the program operation, execute the WREN
instruction.
To execute a Page Program operation, the host drives
CE# low, then sends the Page Program command
cycle (02H), three address cycles followed by the data
to be programmed, then drives CE# high. The pro-
grammed data must be between 1 to 256 bytes and in
whole byte increments; sending less than a full byte will
cause the partial byte to be ignored.
Poll the BUSY bit in the STATUS register or wait TPP for
the completion of the internal, self-timed, Write opera-
tion. See Figures 5-25 and 5-26 for the Page Program
sequence.
When executing Page Program, the memory range for
the SST26VF016B is divided into 256-byte page
boundaries. The device handles shifting of more than
256 bytes of data by maintaining the last 256 bytes of
data as the correct data to be programmed. If the target
address for the Page Program instruction is not the
beginning of the page boundary (A[7:0] are not all zero)
and the number of bytes of data input exceeds or over-
laps the end of the address of the page boundary, the
excess data inputs wrap around and will be pro-
grammed at the start of that target page.
FIGURE 5-25:
PAGE PROGRAM SEQUENCE (SQI)
FIGURE 5-26:
PAGE PROGRAM SEQUENCE (SPI)
Note:
MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0] = 02H
MODE 3
0
SCK
SIO[3:0]
CE#
C1 C0
MODE 0
2
A5 A4
MSN LSN
4
A3 A2
6
A1 A0
8
H0 L0
10
H1 L1
12
H2 L2
HN LN
Data Byte 0 Data Byte 1 Data Byte 2
Data Byte 255
CE#
SO
SI
SCK
ADD.
0 1 234 5 6 78
ADD.
ADD.
Data Byte 0
02
High-Impedance
15 16
23 24
31 32
39
MODE 0
MODE 3
MSb
MSb
MSb
LSb
CE#(cont’)
SO(cont’)
SI(cont’)
SCK(cont’)
40 41 42 43 44 45 46
47 48
Data Byte 1
High-Impedance
MSb
MSb
MSb
LSb
50 51 52 53 54 55
49
Data Byte 2
Data Byte 255
LSb
LSb
LSb
LSb



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