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SST26VF016B-104V/SN Datasheet(PDF) 46 Page - Microchip Technology

Part # SST26VF016B-104V/SN
Description  2.5V/3.0V 16-Mbit Serial Quad I/O™ (SQI™) Flash Memory
PDF  84 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST26VF016B-104V/SN Datasheet(HTML) 46 Page - Microchip Technology

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SST26VF016B
DS20005262G-page 46
2014-2022 Microchip Technology Inc. and its subsidiaries
TABLE 7-4:
WRITE TIMING PARAMETERS (VDD = 2.3V-3.6V)
Symbol
Parameter
Minimum
Maximum
Units
TSE
Sector Erase
—
25
ms
TBE
Block Erase
—
25
ms
TSCE
Chip Erase
—
50
ms
TPP(1)
Page Program
—
1.5
ms
TPSID
Program Security ID
—
1.5
ms
TWS
Write Suspend Latency
—
25
µs
TWPEN
Write Protection Enable Bit Latency
—
25
ms
Note 1: Estimate for typical conditions less than 256 bytes: Programming Time (µs) = 55 + (3.75 x # of bytes)



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