SST26VF016B-104VSLASHSN datasheet(45/84 Pages) MICROCHIP

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2014-2022 Microchip Technology Inc. and its subsidiaries

DS20005262G-page 45

SST26VF016B

7.0

DC CHARACTERISTICS

TABLE 7-1:

DC OPERATING CHARACTERISTICS (VDD = 2.3V-3.6V)

Symbol

Parameter

Limits

Test Conditions

Min.

Typ.

Max.

Units

IDDR

Read Current

—

VDD = VDD maximum,

CE# = 0.1 VDD/0.9 VDD@80 MHz,

SO = open

IDDR1

Read Current

—

VDD = VDD maximum,

CE# = 0.1 VDD/0.9 VDD@40 MHz,

SO = open

IDDR2

Read Current

—

VDD = VDD maximum,

CE# = 0.1 VDD/0.9 VDD@104 MHz,

SO = open

IDDW

Program and Erase Current

—

mA VDD maximum

ISB1

Standby Current

—

µA

CE# = VDD,

VIN = VDD or VSS @+105°C

ISB2

Standby Current

—

µA

CE# = VDD,

VIN = VDD or VSS @+125°C

IDPD

Deep Power-Down Current

—

µA

CE# = VDD, VIN = VDD or VSS

ILI

Input Leakage Current

—

µA

VIN = GND to VDD,

VDD = VDD maximum

ILO

Output Leakage Current

—

µA

VOUT = GND to VDD,

VDD = VDD maximum

VIL

Input Low Voltage

—

0.8

VDD = VDD minimum

VIH

Input High Voltage

0.7 VDD

—

VDD = VDD maximum

VOL

Output Low Voltage

—

0.2

IOL = 100 µA, VDD = VDD minimum

VOH

Output High Voltage

VDD-0.2

—

IOH = -100 µA, VDD = VDD minimum

TABLE 7-2:

CAPACITANCE (TA = +25°C, F = 1 MHZ, OTHER PINS OPEN)

Parameter

Description

Test Condition

Maximum

COUT(1)

Output Pin Capacitance

VOUT = 0V

8 pF

CIN(1)

Input Capacitance

VIN = 0V

6 pF

Note 1: This parameter is measured only for initial qualification and after a design or process change that could

affect this parameter.

TABLE 7-3:

RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Unit

Test Method

NEND(1)

Endurance

100,000

Cycles

JEDEC® Standard A117

TDR(1)

Data Retention

100

Years

JEDEC® Standard A103

ILTH(1)

Latch Up

100 + IDD

JEDEC® Standard A78

Note 1: This parameter is measured only for initial qualification and after a design or process change that could

affect this parameter.

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