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SST26VF016B-104V/SN Datasheet(PDF) 1 Page - Microchip Technology

Part # SST26VF016B-104V/SN
Description  2.5V/3.0V 16-Mbit Serial Quad I/O™ (SQI™) Flash Memory
PDF  84 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST26VF016B-104V/SN Datasheet(HTML) 1 Page - Microchip Technology

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2014-2022 Microchip Technology Inc. and its subsidiaries
DS20005262G-page 1
Features
• Single Voltage Read and Write Operations:
- 2.7V-3.6V or 2.3V-3.6V
• Serial Interface Architecture:
- Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
- Mode 0 and Mode 3
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
• High-Speed Clock Frequency:
- 2.7V-3.6V: 104 MHz maximum
- 2.3V-3.6V: 80 MHz maximum
• Burst Modes:
- Continuous linear burst
- 8/16/32/64-byte linear burst with wrap-around
• Superior Reliability:
- Endurance: 100,000 Cycles (minimum)
- Greater than 100 years data retention
• Low-Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz)
- Standby current: 15 µA (typical)
• Fast Erase Time:
- Sector/Block Erase: 18 ms (typical), 25 ms
(maximum)
- Chip Erase: 35 ms (typical), 50 ms
(maximum)
• Page Program:
- 256 bytes per page in x1 or x4 mode
• End-of-Write Detection:
- Software polling the BUSY bit in STATUS regis-
ter
• Flexible Erase Capability:
- Uniform 4-Kbyte sectors
- Four 8-Kbyte top and bottom parameter overlay
blocks
- One 32-Kbyte top and bottom overlay blocks
- Uniform 64-Kbyte overlay blocks
• Write Suspend:
- Suspend Program or Erase operation to access
another block/sector
• Software Reset (RST) mode
• Software Write Protection:
- Individual Block Write Protection with permanent
lock-down capability
- 64-Kbyte blocks, two 32-Kbyte blocks and
eight 8-Kbyte parameter blocks
- Read Protection on top and bottom 8-Kbyte
parameter blocks
• Security ID:
- One-Time-Programmable (OTP) 2-Kbyte,
Secure ID
- 64-bit unique, factory pre-programmed
identifier
- User-programmable area
• Temperature Range:
- Industrial:
-40°C to +85°C
- Industrial Plus: -40°C to +105°C
- Extended:
-40°C to +125°C
• Automotive AEC-Q100 Qualified
• All devices are RoHS compliant
Packages
• 8-Lead SOIC (3.90 mm)
• 8-Lead SOIJ (5.28 mm)
• 8-Contact WDFN (6 mm x 5 mm)
Product Description
The Serial Quad I/O™ (SQI™) family of Flash memory
devices features a six-wire, 4-bit I/O interface that
allows for low-power, high-performance operation in a
low pin-count package. SST26VF016B also supports
full command-set compatibility to traditional Serial
Peripheral Interface (SPI) protocol. System designs
using SQI Flash devices occupy less board space and
ultimately lower system costs.
All members of the 26 Series SQI family are
manufactured with proprietary, high-performance
CMOS SuperFlash® technology. The split-gate cell
design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with
alternate approaches.
SST26VF016B significantly improves performance and
reliability, while lowering power consumption. These
devices write (Program or Erase) with a single power
supply of 2.3V-3.6V. The total energy consumed is a
function of the applied voltage, current and time of
application. Since for any given voltage range, the
SuperFlash technology uses less current to program
and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less
than alternative Flash memory technologies.
See Figure 2-1 for pin assignments.
SST26VF016B
2.5V/3.0V 16-Mbit Serial Quad I/O™ (SQI™) Flash Memory


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