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SST26VF016B-104V/SN Datasheet(PDF) 72 Page - Microchip Technology

Part # SST26VF016B-104V/SN
Description  2.5V/3.0V 16-Mbit Serial Quad I/O™ (SQI™) Flash Memory
PDF  84 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST26VF016B-104V/SN Datasheet(HTML) 72 Page - Microchip Technology

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SST26VF016B
DS20005262G-page 72
2014-2022 Microchip Technology Inc. and its subsidiaries
5FH
A30:A24
38H
Suspend In-progress Erase Maximum Latency
Maximum time required by the Flash device to suspend an in-progress
erase and be ready to accept another command which accesses the
Flash array.
Maximum latency = 25 µs
Erase maximum latency =.(count+1)*units
units (00b: 128 ns,
01b: 1 µs, 10b: 8 µs, 11b: 64 µs)
A28:A24 = count = 24 =
11000b
A30:A29 = 1 µs =
01b
A31
Suspend/Resume supported
0: supported
1: not supported
JEDEC Flash Parameter Table: 13th DWORD
60H
A7:A0
30H
Program Resume Instruction
61H
A15:A8
B0H
Program Suspend Instruction
62H
A23:A16
30H
Resume Instruction
63H
A31:A24
B0H
Suspend Instruction
JEDEC Flash Parameter Table: 14th DWORD
64H
A1:A0
F7H
Reserved = 11b
A7:A2
STATUS Register Polling Device Busy
111101b: Use of legacy polling is supported by reading the STATUS reg-
ister with 05h instruction and checking WIP bit [0] (0 = ready, 1 = busy).
65H
A14:A8
A9H
Exit Deep Power-down to next operation delay: 10 µs
Delay = (count+1)*unit
A12:A8 = count = 9 = 01001b
A14:A13 units = 01b = 1 µs
A15
Exit Power-down Instruction: ABH =
10101011b
A15 = 1b
66H
A22:A16
D5H
A22:A16 =
1010101b
A23
Enter Power-down instruction: B9H =
10111001b
A23 = 1b
67H
A30:A24
5CH
A30:A24 =
1011100
A31
Deep Power-down Supported
0: supported
1: not supported
JEDEC Flash Parameter Table: 15th DWORD
68H
A3:A0
29H
4-4-4 Mode Disable Sequences
Xxx1b: issue FF instruction.
1xxxb: issue the Soft Reset 66/99 sequence.
A7:A4
4-4-4 mode enable sequences
X_xx1xb: issue instruction 38h.
TABLE 11-1:
SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (CONTINUED) (9 OF 17)
Address
Bit Address
Data
Comments
Note 1: See Section 11.1 “Mapping Guidance Details” for more detailed mapping information.



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