SST26VF016B-104VSLASHSN datasheet(43/84 Pages) MICROCHIP

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2014-2022 Microchip Technology Inc. and its subsidiaries

DS20005262G-page 43

SST26VF016B

6.0

ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings (†)

Temperature under bias ..........................................................................................................................-55°C to +125°C

Storage temperature ...............................................................................................................................-65°C to +150°C

DC voltage on any pin to ground potential...........................................................................................-0.5V to VDD+0.5V

Transient voltage (<20 ns) on any pin to ground potential...................................................................-2.0V to VDD+2.0V

Package power dissipation capability (TA = +25°C)..................................................................................................1.0W

Surface mount solder reflow temperature.....................................................................................+260°C for 10 seconds

Output short circuit current(1) ..................................................................................................................................50 mA

6.1

Power-Up Specifications

All functionalities and DC specifications are specified

for a VDD ramp rate of greater than 1V per 100 ms

(0V to 3.0V in less than 300 ms). See Table 6-3 and

Figure 6-1 for more information.

When VDD drops from the operating voltage to below

the minimum VDD threshold at power-down, all opera-

tions are disabled and the device does not respond to

commands. Data corruption may result if a power-down

occurs while a write registers, program or erase opera-

tion is in progress (see Figure 6-2).

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

Note 1: Output shorted for no more than one second. No more than one output shorted at a time.

TABLE 6-1:

OPERATING RANGE

Range

Ambient Temperature

VDD

Industrial

-40°C to +85°C

2.3V-3.6V

Industrial Plus

-40°C to +105°C

2.3V-3.6V

Extended(1)

-40°C to +125°C

2.3V-3.6V

Note 1: Maximum operating frequency for Extended temperature is 80 MHz.

TABLE 6-2:

AC CONDITIONS OF TEST(1)

Input Rise/Fall Time

Output Load

3 ns

CL = 30 pF

Note 1: See Figure 8-5.

TABLE 6-3:

RECOMMENDED SYSTEM POWER-UP/DOWN TIMINGS

Symbol

Parameter

Minimum

Maximum

Units

Conditions

TPU-READ(1)

VDD Min to Read Operation

100

—

µs

TPU-WRITE(1)

VDD Min to Write Operation

100

—

µs

TPD(1)

Power-Down Duration

100

—

VOFF

VDD Off Time

—

0.3

0V recommended

Note 1: This parameter is measured only for initial qualification and after a design or process change that could

affect this parameter.

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