M65KG256AB datasheet(28/51 Pages) STMICROELECTRONICS

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7 DC and AC parameters

M65KG256AB

28/51

Table 13.

DC Characteristics 2

Table 14.

Self Refresh Current (IDD6) in Normal Operating Mode

Symbol

Parameter

Test Condition(1)(2)

VDD and VDDQ = 1.7 to 1.9V, VSS = VSSQ = 0V.

IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.

M65KG256AB Unit

IDD1

(2)

Operating Current

Burst length = 4, one bank active

tRC ≥ tRC(min), IOL = 0mA

IDD2P

Precharge Standby Current in Power-

Down Mode

≤VIL(max), tCK = 15ns

0.8

IDD2PS

≤VIL(max), tCK = ∞

0.6

IDD2N

Precharge Standby Current in Non

Power-Down Mode

≥ VIH (min), E ≥ VIH (min),

tCK = 15ns, Input signals changed

once in 2 clock cycles.

IDD2NS

≥ VIH (min), tCK = ∞

Input signals are stable

IDD3P

Active Standby Current in Power-Down

Mode

≤VIL(max), tCK = 15ns

1.5

IDD3PS

≤VIL(max), tCK = ∞

1.2

IDD3N

Active Standby Current in Non Power-

Down Mode

≥ VIH (min), E ≥ VIH (min),

tCK = 15ns, Input signals are changed

once in 2 clock cycles.

IDD3NS

≥ VIH (min), tCK = ∞

Input signals are stable

IDD4

(2)

Burst Mode Current

tCK ≥ tCK (min), IOL = 0mA

All banks active

Burst Length = 4

130

IDD5

(3)

Addresses change only once during tCK.

Auto Refresh Current

tRRC ≥ tRRC (min)

IDD6

Self Refresh Current

≤0.2V

See Table 14

µA

IDD7

Standby Current in Deep Power-down

Mode

≤0.2V (see Deep Power-Down

mode description)

µA

Temperature in °C

Memory Array(1)

TJ = –30 to 85°C, VDD and VDDQ = 1.7 to 1.9V, VSS = VSSQ = 0V; KE ≤0.2V.

Unit

All Banks

2 Banks

1 Bank

Typ

Max

Typ

Max

Typ

Max

-30

≤TJ ≤40

200

160

µA

≤TJ ≤65

350

270

220

µA

≤TJ ≤85

550

400

320

µA

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