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M65KG256AB Datasheet(PDF) 29 Page - STMicroelectronics

Part # M65KG256AB
Description  256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
PDF  51 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M65KG256AB Datasheet(HTML) 29 Page - STMicroelectronics

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M65KG256AB
7 DC and AC parameters
29/51
Table 15.
AC Characteristics
Symbol
Alt
Parameter
M65KG256AB(1)
1.
The above timings are measured according to the test conditions shown in Table 10: Operating and AC Measurement
Conditions.
Unit
Min
Max
tAC
(2)
2.
These timings define the signal transition delays from K or K cross point, that is when K or K signal crosses VREF.
Data Output Access Time from K and K
1.5
6.0
ns
tAS
(3)
tIS
Address and Control Input Setup Time
1.4
ns
tAH
(3)
tIH
Address Control Input Hold Time
1.4
ns
tCK
Clock Cycle Time
7.5
ns
tDQSCK
(2)
UDQS/LDQS Access Time from K and K
1.5
6.0
ns
tDQSHZ
(5)
UDQS/LDQS High-Z Time from K and K
1.5
6.0
ns
tDQSLZ
(6)
UDQS/LDQS Low-Z Time from K and K
1.5
6.0
ns
tDQSQ
(3)
3. The timing reference level is VREF.
UDQS/LDQS to Data Output Skew
0.65
ns
tDV
(4)
4. tDV defines the delay between two successive transitions of the data output signals, that is when DQ0-DQ15
cross VREF.
Data Output Valid to Data Output Transition Time
2
ns
tDS
(3)
Data Input and UDQM/LDQM Setup Time
0.9
ns
tDH
(3)
Data Input and UDQM/LDQM Hold Time
0.9
ns
tOHZ
(5)
5.
tOHZ and tDQSHZ define the transition time from Low-Z to High-Z of DQ0-DQ15 and UDQS/LDQS, at the end of a Burst Read
operation, respectively. They specify when data outputs stop being driven.
tHZ
Data Output High-Z Time from K and K
1.5
6.0
ns
tOLZ
(6)
6.
tOLZ and tDQSLZ define the transition time from High-Z to Low-Z of DQ0-DQ15 and UDQS/LDQS, at the end of a Burst Read
operation. They specify when data outputs begin to be driven.
tLZ
Data Output Low-Z Time from K and K
1.5
6.0
ns
tRAS
RAS Active Time (Bank (Row) Activate to Bank Precharge)
45
120000
ns
tRC
RAS Cycle Time (Bank (Row) Activate to Bank Activate in Auto
Refresh mode)
75
ns
tRCD
Delay Time, from RAS Active to CAS Active
30
ns
tRRD
Delay Time, from RAS Active to RAS Bank Active
15
ns
tRP
RAS Precharge Time
22.5
ns
tREF
Average Periodic Refresh Time
7.8
µs
tSRE
tSREX
Self Refresh Exit Time
16
ns
tWPRES
Write Preamble Setup Time
0
ns



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