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M65KG256AB Datasheet(PDF) 35 Page - STMicroelectronics |
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M65KG256AB Datasheet(HTML) 35 Page - STMicroelectronics |
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35 / 51 page  M65KG256AB 7 DC and AC parameters 35/51 Figure 13. Write followed by Write in Same Bank and Row 1. The consecutive WRIT command must be issued after a minimum delay of tCK to interrupt the previous Write operation. 2. To issue the consecutive WRITE to a different row, precharge the bank (PRE) to interrupt the previous Write operation. tRP after the PRE command, issue the ACT command. The consecutive WRIT command can be issued tRCD after the ACT command. ACT WRIT WRIT Command K K DIA0 DIA1 UDQS, LDQS DQ0-DQ15 DIB0 DIB1 ai11207 Note: 1. Burst Length = 4 2. Bank = Bank A NOP Row Column B Address BA0-BA1 NOP Column A DIB2 Bank A Active Data Written to Column A Data Written to Column B DIB3 tRCD |
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