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SL3S1205FUD2/HAP Datasheet(PDF) 29 Page - NXP Semiconductors |
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SL3S1205FUD2/HAP Datasheet(HTML) 29 Page - NXP Semiconductors |
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29 / 38 page ![]() NXP Semiconductors SL3S1205_15 UCODE 8/8m 11 Characteristics 11.1 UCODE 8/8m bare die characteristics Symbol Parameter Conditions Min Typ Max Unit fi input frequency 840 - 960 MHz Pi(min) minimum input power READ sensitivity [1] [2] [3] - - 22.9 - dBm reduced operating range [4] - + 1 - dBm Pi(min) minimum input power WRITE sensitivity [4] - -17.8 - dBm 16-bit [5] - 0.7 - ms t 16bit encoding speed 32-bit (block write) [5] - 1.2 - ms Ci chip input capacitance, Large Pads parallel [2] [6] [7] - 0.69 - pF 866 MHz [2] [6] [7] - 15-j265 - Ω 915 MHz [2] [6] [7] - 14-j252 - Ω Z chip impedance, Large Pads 953 MHz [2] [6] [7] - 13-j242 - Ω Z typical assembled impedance, Large Pads (see Figure 8) 915 MHz [8] [9] [7] - 19-j234 Ω Z typical assembled impedance in case of single-slit antenna assembly, Large Pads (see Figure 9) 915 MHz [8] [10] [7] 13-j191 - Ω Table 15. UCODE 8/8m RF interface characteristics (RF1, RF2) [1] Power to process a QUERY command [2] Measured with a 50 Ω source impedance directly on the chip [3] Results in approximately -23 dBm tag sensitivity with a 2.15 dBi gain antenna [4] Tag sensitivity on a 2.15 dBi gain antenna [5] When the memory content is "0000...". [6] At minimum operating power [7] at center capacitor of Self Adjust [8] The antenna shall be matched to this impedance [9] Assuming 50ff additional assembly capacitance [10] Assuming 220ff additional assembly+test pad capacitance Symbol Parameter Conditions Min Typ Max Unit EEPROM characteristics tret retention time Tamb ≤ 55 °C 20 - - year Nendu(W) write endurance 100k - - cycle Table 16. UCODE 8/8m memory characteristics SL3S1205_15 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved. Product data sheet Rev. 3.5 — 1 April 2021 COMPANY PUBLIC 398435 29 / 38 |
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