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AS4SD4M16DG-10/IT Datasheet(PDF) 9 Page - Austin Semiconductor |
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AS4SD4M16DG-10/IT Datasheet(HTML) 9 Page - Austin Semiconductor |
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9 / 50 page ![]() SDRAM SDRAM SDRAM SDRAM SDRAM AS4SD4M16 AS4SD4M16 Rev. 2.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 Austin Semiconductor, Inc. TRUTH TABLE 1- Commands and DMQ Operation (Note: 1) NAME (FUNCTION) CS\ RAS\ CAS\ WE\ DQM ADDR DQs NOTES COMMAND INHIBIT (NOP) H X X X X X X NO OPERATION (NOP) L H H H X X X ACTIVE (select bank and activate row) L L H H X Bank/Row X 3 READ (select bank and column and start READ burst) L H L H X Bank/Col X 4 WRITE (select bank and column and start WRITE burst) L H L L X Bank/Col Valid 4 BURST TERMINATE L H H L X X Active PRECHARGE (deactivate row in bank or banks) L L H L X Code X 5 LOAD MODE REGISTER L L L L X OpCode X 2 Write Enable/Output Enable - - - - L - Active 8 Write Inhibit/Output High-Z - - - - H - High-Z 8 X6,7 LH X X AUTO REFRESH or SELF REFRESH (enter self refresh mode) LL COMMANDS Truth Table 1 provides a quick reference of available commands. This is followed by a written description of each command. Two additional Truth Tables appear following the Operation section; these tables provide current state/next state informa- tion. NOTE: 1. CKE is HIGH for all commands shown except SELF REFRESH. 2. A0-A11 define the op-code written to the Mode Register. 3. A0-A11 provide row address, and BA0, BA1 determine which bank is made active. 4. A0-A7 (x16) provide column address; A10 HIGH enables the auto precharge feature (nonpersistent), while A10 LOW disables the auto precharge feature; BA0, BA1 determine which bank is being read from or written to. 5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are “Don’t Care.” 6. This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if CKE is LOW. 7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE. 8. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay). |
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