AS4SD4M16DG-10SLASHIT datasheet(30/50 Pages) AUSTIN

30 / 50 page

SDRAM

AS4SD4M16

Rev. 2.1 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS*

Voltage on VDD/VDDQ Supply

Relative to VSS ........................................ -1V to +4.6V

Voltage on Inputs, NC or I/O Pins

Relative to VSS ........................................ -1V to +4.6V

Operating Temperature, T

(ambient)........-55

°C to +125°C

Storage Temperature (plastic) ................-55

°C to +150°C

Power Dissipation ................................................. 1W

*Stresses greater than those listed as “Absolute

Maximum Ratings” may cause permanent damage to the

device.

This is a stress rating only, and functional

operation of the device at these or any other conditions

above those indicated in the operational sections of this

specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may

affect reliability.

PARAMETER/CONDITION

SYMBOL

MIN

MAX

UNITS

NOTES

Supply Voltage

VDD/VDDQ

3.6

Input High (Logic 1) Voltage, all inputs

VIH

2.2

VDD +0.3

V23

Input Low (Logic 0) Voltage, all inputs

VIL

-0.5

0.7

INPUT LEAKAGE CURRENT

Any input 0V<VIN<VDD

(All other pins not under test = 0V)

-5

µΑ

OUTPUT LEAKAGE CURRENT (DQs are disabled; 0V<VOUT<VDDQ)

IOZ

-5

µΑ

VOH

2.4

VOL

0.4

OUTPUT LEVELS

Output High Voltage (IOUT = -4mA)

Output Low Voltage (IOUT = 4mA)

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

(Notes: 1, 6) (-55°

≤ Τ

Α ≤

≤≤≤≤ +125 °C ; V

DD/VDDQ =+3.3 V +0.3V)

DD SPECIFICATIONS AND CONDITIONS

1, 6, 11, 13 (-55°C<T

A <+125 °C; VDD/VDDQ =+3.3 V +0.3V)

SYM

-8

-10

UNITS NOTES

IDD1

120

110

3, 18,

IDD2

2.5

IDD3

3, 12,

IDD4

145

120

3, 18,

tRFC = tRFC (MIN); CL = 3

IDD5

205

195mA

tRFC = 15.625µs; CL = 3

IDD6

IDD7

2.5

MAX

OPERATING CURRENT; Active Mode, Burst = 2,

READ or WRITE, tRC=tRC (MIN), CAS latency = 3,

tCK = 10ns (15ns for -10)

SELF REFRESH CURRENT: CKE<0.2V (-40 to +85 only)

AUTO REFRESH CURRENT;

CKE=HIGH; CS\=HIGH

tCK=10ns (15ns for -10)

PARAMETER/CONDITIONS

3, 12,

18, 19

STANDBY CURRENT: Power-Down Mode;

All banks idle; CKE=LOW; tCK = 10ns (15ns for -10)

STANDBY CURRENT; Active Mode; CKE=HIGH,

CS\=HIGH; tCK = 10ns (15ns for -10),

All banks active after tRCD met; No accesses in progress

OPERATING CURRENT: Burst Mode; Continuous burst;

READ or WRITE; tCK = 10ns (15ns for -10);

All banks active; CAS latency = 3

AS4SD4M16DG-10/IT Datasheet(PDF) 30 Page - Austin Semiconductor

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