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AS4SD4M16DG-10/IT Datasheet(PDF) 32 Page - Austin Semiconductor |
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AS4SD4M16DG-10/IT Datasheet(HTML) 32 Page - Austin Semiconductor |
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32 / 50 page  SDRAM SDRAM SDRAM SDRAM SDRAM AS4SD4M16 AS4SD4M16 Rev. 2.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 32 Austin Semiconductor, Inc. SYMBOL -8 -10 UNITS NOTES tCCD 11 tCK 17 tCKED 11 tCK 14 tPED 11 tCK 14 tDQD 00 tCK 17 tDQM 00 tCK 17 tDQZ 22 tCK 17 tDWD 00 tCK 17 Data-in to ACTIVE command A2 version tDAL 54 tCK 15, 21 Data-in to PRECHARGE command A1 version A2 version tDPL 22 tCK 16, 21 tBDL 11 tCK 17 tCDL 11 tCK 17 Last data-in to PRECHARGE command A2 version tRDL 22 tCK 16, 21 tMRD 22 tCK 27 CL = 3 tROH 33 tCK 17 CL = 2 tROH 22 tCK 17 Data-out to high-impedance from PRECHARGE command Last data-in to burst STOP command Last data-in to new READ/WRITE command LOAD MODE REGISTER command to ACTIVE or REFRESH command CKE to clock enable or power-down exit setup mode CKE to clock disable or power-down entry mode READ/WRITE command to READ/WRITE command PARAMETER WRITE command to input data delay DQM to data high-impedance during READs DQM to data mask during WRITEs DQM to input data delay MIN MAX CL = 3 tAC --- 6 ns 22 CL = 2 tAC --- 9 ns 22 CL = 3 tCK 8 --- ns 22 CL = 2 tCK 12 --- ns 22 tRCD 20 --- ns 22 tRP 24 --- ns 22 tRCD 80 --- tCK 21 WRITE recovery time A2 Version tWR 2 --- --- --- CLKs --- PARAMETER 3-2-3 -8 SYM UNITS NOTES PRECHARGE command period AUTO REFRESH, ACTIVE command period 100 MHz Speed Reference (CL -tRCD-tRP) Clock cycle time Access times from CLK (pos. edge) ACTIVE to READ or WRITE delay AC FUNCTIONAL CHARACTERISTICS5, 6, 7, 8, 9, 11 (-55oC<T A<+125 oC) ELECTRICAL TIMING CHARACTERISTICS for -8 SPEED5, 6, 7, 8, 9, 11, 24 (-55oC<T A<+125 oC) |
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