MCIMX6DP6AYM2AB datasheet(37/160 Pages) NXP

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Electrical Characteristics

i.MX 6DualPlus/6QuadPlus Applications Processors Industrial Products, Rev. 3, 11/2018

NXP Semiconductors

CAUTION

The internal RTC oscillator does not provide an accurate frequency and is

affected by process, voltage, and temperature variations. NXP strongly

recommends using an external crystal as the RTC_XTALI reference. If the

internal oscillator is used instead, careful consideration must be given to the

timing implications on all of the SoC modules dependent on this clock.

The OSC32k runs from VDD_SNVS_CAP, which comes from the VDD_HIGH_IN/VDD_SNVS_IN

power mux.

4.6

I/O DC Parameters

This section includes the DC parameters of the following I/O types:

•

General Purpose I/O (GPIO)

•

Double Data Rate I/O (DDR) for LPDDR2 and DDR3/DDR3L modes

•LVDS I/O

NOTE

The term ‘OVDD’ in this section refers to the associated supply rail of an

input or output.

Table 19. OSC32K Main Characteristics

Parameter

Min

Typ

Max

Comments

Fosc

—

32.768 kHz

—

This frequency is nominal and determined mainly by the crystal selected. 32.0 K

would work as well.

Current

consumption

—4

μA

—

The typical value shown is only for the oscillator, driven by an external crystal.

If the internal ring oscillator is used instead of an external crystal, then

approximately 25

μA must be added to this value.

Bias resistor

—

14 M

—

This the integrated bias resistor that sets the amplifier into a high gain state. Any

leakage through the ESD network, external board leakage, or even a scope probe

that is significant relative to this value will debias the amplifier. The debiasing will

result in low gain, and will impact the circuit's ability to start up and maintain

oscillations.

Target Crystal Properties

Cload

—

10 pF

—

Usually crystals can be purchased tuned for different Cloads. This Cload value is

typically 1/2 of the capacitances realized on the PCB on either side of the quartz.

A higher Cload will decrease oscillation margin, but increases current oscillating

through the crystal.

ESR

—

50 k

100 k

Ω Equivalent series resistance of the crystal. Choosing a crystal with a higher value

will decrease the oscillating margin.

MCIMX6DP6AYM2AB Datasheet(PDF) 37 Page - NXP Semiconductors

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