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UJA1075TW/5V0/WD Datasheet(PDF) 33 Page - NXP Semiconductors

Part # UJA1075TW/5V0/WD
Description  High-speed CAN/LIN core system basis chip
PDF  53 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

UJA1075TW/5V0/WD Datasheet(HTML) 33 Page - NXP Semiconductors

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UJA1075_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 27 May 2010
33 of 53
NXP Semiconductors
UJA1075
High-speed CAN/LIN core system basis chip
IBAT(add)
additional battery supply
current
5.1 V < VBAT <7.5 V
-
-
50
μA
4.5 V < VBAT <5.1 V
V1 on (5 V version)
--
3
mA
V2 on; MC = 11
V2UIE = 1; IV2 = 0 mA
100
-
950
μA
CAN Active mode (recessive)
STBCC = 0; MC = 1x; VTXDC =VV1
ICANH = ICANL = 0 mA
5.5 V < VBAT <28V
--
10
mA
CAN active (dominant)
STBCC = 0; MC = 1x; VTXDC =0V
R(CANH-CANL) =45 Ω
5.5 V < VBAT <28V
--
70
mA
LIN Active mode (recessive)
STBCL = 0; MC = 1x
VTXDL=VV1; IDLIN =ILIN = 0 mA
5.5 V < VBAT <28V
-
-
1300
μA
LIN Active mode (dominant);
STBCL = 0; MC = 1x
VTXDL =0 V; IDLIN =ILIN = 0 mA
VBAT =14 V
--
5
mA
LIN Active mode (dominant)
STBCL = 0; MC = 1x; VBAT =28V
VTXDL=0 V; IDLIN =ILIN = 0 mA
--
10
mA
Vth(det)pon
power-on detection
threshold voltage
4.5
-
5.5
V
Vth(det)poff
power-off detection
threshold voltage
4.25
-
4.5
V
Vhys(det)pon
power-on detection
hysteresis voltage
200
-
-
mV
Vuvd(LIN)
LIN undervoltage detection
voltage
5-
5.3
V
Vuvr(LIN)
LIN undervoltage recovery
voltage
5-
5.5
V
Vhys(uvd)LIN
LIN undervoltage detection
hysteresis voltage
25
-
300
mV
Vuvd(ctrl)Iext
external current control
undervoltage detection
voltage
5.9
-
7.5
V
Table 10.
Static characteristics …continued
Tvj = −40 °C to +150 °C; VBAT =4.5 V to 28 V; VBAT > VV1; VBAT > VV2; RLIN = 500 Ω; R(CANH-CANL) = 45 Ω to 65 Ω; all voltages
are defined with respect to ground; positive currents flow in the IC; typical values are given at VBAT = 14 V; unless otherwise
specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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