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UJA1075TW/5V0/WD Datasheet(PDF) 33 Page - NXP Semiconductors |
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UJA1075TW/5V0/WD Datasheet(HTML) 33 Page - NXP Semiconductors |
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33 / 53 page ![]() UJA1075_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 27 May 2010 33 of 53 NXP Semiconductors UJA1075 High-speed CAN/LIN core system basis chip IBAT(add) additional battery supply current 5.1 V < VBAT <7.5 V - - 50 μA 4.5 V < VBAT <5.1 V V1 on (5 V version) -- 3 mA V2 on; MC = 11 V2UIE = 1; IV2 = 0 mA 100 - 950 μA CAN Active mode (recessive) STBCC = 0; MC = 1x; VTXDC =VV1 ICANH = ICANL = 0 mA 5.5 V < VBAT <28V -- 10 mA CAN active (dominant) STBCC = 0; MC = 1x; VTXDC =0V R(CANH-CANL) =45 Ω 5.5 V < VBAT <28V -- 70 mA LIN Active mode (recessive) STBCL = 0; MC = 1x VTXDL=VV1; IDLIN =ILIN = 0 mA 5.5 V < VBAT <28V - - 1300 μA LIN Active mode (dominant); STBCL = 0; MC = 1x VTXDL =0 V; IDLIN =ILIN = 0 mA VBAT =14 V -- 5 mA LIN Active mode (dominant) STBCL = 0; MC = 1x; VBAT =28V VTXDL=0 V; IDLIN =ILIN = 0 mA -- 10 mA Vth(det)pon power-on detection threshold voltage 4.5 - 5.5 V Vth(det)poff power-off detection threshold voltage 4.25 - 4.5 V Vhys(det)pon power-on detection hysteresis voltage 200 - - mV Vuvd(LIN) LIN undervoltage detection voltage 5- 5.3 V Vuvr(LIN) LIN undervoltage recovery voltage 5- 5.5 V Vhys(uvd)LIN LIN undervoltage detection hysteresis voltage 25 - 300 mV Vuvd(ctrl)Iext external current control undervoltage detection voltage 5.9 - 7.5 V Table 10. Static characteristics …continued Tvj = −40 °C to +150 °C; VBAT =4.5 V to 28 V; VBAT > VV1; VBAT > VV2; RLIN = 500 Ω; R(CANH-CANL) = 45 Ω to 65 Ω; all voltages are defined with respect to ground; positive currents flow in the IC; typical values are given at VBAT = 14 V; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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