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L99DZ120 Datasheet(PDF) 42 Page - STMicroelectronics |
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L99DZ120 Datasheet(HTML) 42 Page - STMicroelectronics |
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42 / 162 page ![]() Electrical specifications L99DZ120 42/162 DocID029145 Rev 4 3.4.15 Gate drivers for the external Power-MOS switching times The voltages are referred to power ground and currents are assumed positive, when the current flows into the pin. 6 V ≤ VS ≤ 28 V; 6 V ≤ VSREG ≤ 28 V; Tj = -40 °C to 150 °C, unless otherwise specified. RGSHx Passive gate-clamp resistance VGHx = 0.5 V 15 kΩ Drivers for external low-side Power-MOS IGLx(Ch) Average charge-current (charge stage) Tj = 25 °C 0.3 A RGLx On-resistance (discharge- stage) VSLx = 0 V; IGHx = 50 mA; Tj = 25 °C 610 14 Ω VSLx = 0 V; IGHx = 50 mA; Tj = 130 °C 14 20 Ω VGHLx Gate-on voltage VS = 6 V; ICP = 15 mA VSLx + 6 V VS = 12 V; ICP = 15 mA VSLx + 8 VSLx + 10 VSLx + 11.5 V RGSLx Passive gate-clamp resistance 15 kΩ Table 20. H-bridge driver (continued) Symbol Parameter Test condition Min. Typ. Max. Unit Table 21. Gate drivers for the external Power-MOS switching times Symbol Parameter Test condition Min. Typ. Max. Unit TG(HL)xHL Propagation delay time high to low (switch mode(1) VS = 13.5 V; VSHx = 0; RG = 0 Ω; CG = 2.7 nF 1.5 µs TG(HL)xLH Propagation delay time low to high (switch mode)(1) VS = 13.5 V; VSLx = 0; RG = 0 Ω; CG = 2.7 nF 1.5 µs IGHxrmax Maximum source current (current mode) VS = 13.5 V; VSHx = 0; VGHx = 1 V; SLEW<4:0> = 1 FH 32 mA IGHxfmax Maximum sink current (current mode) VS = 13.5 V, VSHx = 0; VGHx = 2 V; SLEW<4:0> = 1 FH 32 mA dIIGHxr Source current accuracy VS = 13.5 V; VSHx = 0; VGHx = 1 V See Figure 14: IGHxr ranges dIIGHxf Sink current accuracy VS = 13.5 V; VSHx = 0; VGHx = 2 V See Figure 15: IGHxf ranges VDSHxrSW Switching voltage (VS-VSH) between current mode and switch mode (rising) VS = 13.5 V 2.8 V VDSHxfSW Switching voltage (VS-VSH) between switch mode and current mode (falling) VS = 13.5 V 2.8 V |
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