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L99DZ120 Datasheet(PDF) 48 Page - STMicroelectronics |
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L99DZ120 Datasheet(HTML) 48 Page - STMicroelectronics |
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48 / 162 page  Electrical specifications L99DZ120 48/162 DocID029145 Rev 4 Table 28. LIN transmitter and receiver: pin LIN Symbol Parameter Test condition Min. Typ. Max. Unit VTHdom Receiver threshold voltage recessive to dominant state 0.4 VSREG 0.45 VSREG 0.5 VSREG V VBusdom Receiver dominant state 0.4VSRE G V VTHrec Receiver threshold voltage dominant to recessive state 0.5 VSREG 0.55 VSREG 0.6 VSREG V VBusrec Receiver recessive state 0.6 VSREG V VTHhys Receiver threshold hysteresis: VTHrec -VTHdom 0.07 VSREG 0.1 VSREG 0.175 VSREG V VTHcnt Receiver tolerance center value: (VTHrec +VTHdom)/2 0.475 VSREG 0.5 VSREG 0.525 VSREG V VTHwkup Activation threshold for wake-up comparator 1.0 1.5 2 V VTHwkdwn Activation threshold for wake-up comparator VSREG - 3.5 VSREG - 2.5 VSREG- 1.5 V tLINBUS LIN Bus Wake-up Dominant Filter time Sleep mode; edge: rec-dom 64 μs tdom_LIN LIN Bus Wake-up Dominant Filter time Sleep mode; edge: rec-dom- rec 28 μs ILINDomSC Transmitter input current limit in dominant state VTXD = VTXDLOW; VLIN = VBATMAX = 18 V 40 100 180 mA Ibus_PAS_dom Input leakage current at the receiver incl. pull-up resistor VTXD = VTXDHIGH; VLIN = 0 V; VBAT = 12 V; Slave mode -1 mA Ibus_PAS_rec Transmitter input current in recessive state In standby modes; VTXD = VTXDHIGH; VLIN > 8 V; VBAT < 18 V; VLIN ≥ VBAT 20 μA Ibus_NO_GND Input current if loss of GND at device GND = VSREG; 0 V < VLIN < 18 V; VBAT = 12 V -1 1 mA Ibus Input current if loss of VBAT at device GND = VS; 0 V < VLIN < 18 V Tj=-40 °C ....105 °C(1) 30 μA GND = VS; 0 V < VLIN < 18 V Tj= 130 °C(2) 35 μA VLINdom LIN voltage level in dominant state Active mode; VTXD = VTXDLOW; Rbus = 500 Ω 1.2 V VLINrec LIN voltage level in recessive state Active mode; VTXD = VTXDHIGH; ILIN = 10 µA 0.8*VS V RLINup LIN output pull up resistor VLIN = 0 V 20 40 60 kΩ CLIN LIN input capacitance Guaranteed by design 100 pF |
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