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MC68HC908AP16CFB Datasheet(PDF) 57 Page - Motorola, Inc

Part # MC68HC908AP16CFB
Description  Microcontrollers
PDF  440 Pages
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MC68HC908AP16CFB Datasheet(HTML) 57 Page - Motorola, Inc

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FLASH Memory
FLASH Control Register
MC68HC908AP Family — Rev. 2.5
Data Sheet
MOTOROLA
57
4.3 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase
operation.
HVEN — High Voltage Enable Bit
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can only be set if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
This read/write bit configures the memory for mass erase operation or
page erase operation when the ERASE bit is set.
1 = Mass erase operation selected
0 = Page erase operation selected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation not selected
PGM — Program Control Bit
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = Program operation selected
0 = Program operation not selected
Address:
$FE08
Bit 7
654321
Bit 0
Read:
0000
HVEN
MASS
ERASE
PGM
Write:
Reset:
00000000
Figure 4-2. FLASH Control Register (FLCR)
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com



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