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MC68HC908AP16CFB Datasheet(PDF) 60 Page - Motorola, Inc

Part # MC68HC908AP16CFB
Description  Microcontrollers
PDF  440 Pages
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MC68HC908AP16CFB Datasheet(HTML) 60 Page - Motorola, Inc

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FLASH Memory
Data Sheet
MC68HC908AP Family — Rev. 2.5
60
MOTOROLA
4.6 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row
consists of 64 consecutive bytes starting from addresses $XX00,
$XX40, $XX80 or $XXC0. Use the following procedure to program a row
of FLASH memory. (Figure 4-3 shows a flowchart of the programming
algorithm.)
1. Set the PGM bit. This configures the memory for program
operation and enables the latching of address and data for
programming.
2. Write any data to any FLASH location within the address range of
the row to be programmed.
3. Wait for a time, tnvs (5 µs).
4. Set the HVEN bit.
5. Wait for a time, tpgs (10 µs).
6. Write data to the FLASH location to be programmed.
7. Wait for time, tprog (20 µs to 40 µs).
8. Repeat steps 6 and 7 until all bytes within the row are
programmed.
9. Clear the PGM bit.
10. Wait for time, tnvh (5 µs).
11. Clear the HVEN bit.
12. After time, trcv (1 µs), the memory can be accessed in read mode
again.
This program sequence is repeated throughout the memory until all data
is programmed.
NOTE:
The time between each FLASH address change (step 6 to step 6), or the
time between the last FLASH addressed programmed to clearing the
PGM bit (step 6 to step 9), must not exceed the maximum programming
time, tprog max.
NOTE:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com



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