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MC68HC908AP16CFB Datasheet(PDF) 60 Page - Motorola, Inc |
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MC68HC908AP16CFB Datasheet(HTML) 60 Page - Motorola, Inc |
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60 / 440 page ![]() FLASH Memory Data Sheet MC68HC908AP Family — Rev. 2.5 60 MOTOROLA 4.6 FLASH Program Operation Programming of the FLASH memory is done on a row basis. A row consists of 64 consecutive bytes starting from addresses $XX00, $XX40, $XX80 or $XXC0. Use the following procedure to program a row of FLASH memory. (Figure 4-3 shows a flowchart of the programming algorithm.) 1. Set the PGM bit. This configures the memory for program operation and enables the latching of address and data for programming. 2. Write any data to any FLASH location within the address range of the row to be programmed. 3. Wait for a time, tnvs (5 µs). 4. Set the HVEN bit. 5. Wait for a time, tpgs (10 µs). 6. Write data to the FLASH location to be programmed. 7. Wait for time, tprog (20 µs to 40 µs). 8. Repeat steps 6 and 7 until all bytes within the row are programmed. 9. Clear the PGM bit. 10. Wait for time, tnvh (5 µs). 11. Clear the HVEN bit. 12. After time, trcv (1 µs), the memory can be accessed in read mode again. This program sequence is repeated throughout the memory until all data is programmed. NOTE: The time between each FLASH address change (step 6 to step 6), or the time between the last FLASH addressed programmed to clearing the PGM bit (step 6 to step 9), must not exceed the maximum programming time, tprog max. NOTE: Programming and erasing of FLASH locations cannot be performed by code being executed from the FLASH memory. While these operations must be performed in the order shown, other unrelated operations may occur between the steps. Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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