R7FA2L1AB2DFM datasheet(77/114 Pages) RENESAS

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Input voltage

Reference voltage

Output voltage

+100 mV

-100 mV

Figure 2.48

Output delay time

2.11

Flash Memory Characteristics

2.11.1

Code Flash Memory Characteristics

Table 2.53

Code flash characteristics (1)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

Reprogramming/erasure cycle*1

NPEC

1000

—

Times

—

Data hold time After 1000 times NPEC

tDRP

20*2 *3

—

Year

Ta = +85°C

Ta = +105°C

Note 1. The reprogram/erase cycle is the number of erasures for each block. When the reprogram/erase cycle is n times (n = 1,000),

erasing can be performed n times for each block. For instance, when 4-byte programming is performed 512 times for different

addresses in 2-KB blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming

the same address for several times as one erasure is not enabled (overwriting is prohibited).

Note 2. Characteristic when using the flash memory programmer and the self-programming library provided by Renesas Electronics.

Note 3. This result is obtained from reliability testing.

Table 2.54

Code flash characteristics (2)

High-speed operating mode

Conditions: VCC = AVCC0 = 1.8 to 5.5 V

Parameter

Symbol

ICLK = 1 MHz

ICLK = 48 MHz

Unit

Min

Typ

Max

Min

Typ

Max

Programming time

4-byte

tP4

—

732

—

321

µs

Erasure time

2-KB

tE2K

—

12.5

355

—

5.6

215

Blank check time

4-byte

tBC4

—

46.5

—

8.3

µs

2-KB

tBC2K

—

3681

—

240

µs

Erase suspended time

tSED

—

22.3

—

10.5

µs

Access window information program

Start-up area selection and security

setting time

tAWSSAS —

21.2

570

—

11.4

423

OCD/serial programmer ID setting

time*1

tOSIS

—

84.7

2280

—

45.3

1690

Flash memory mode transition wait

time 1

tDIS

—

µs

Flash memory mode transition wait

time 2

tMS

—

µs

Note:

Does not include the time until each operation of the flash memory is started after instructions are executed by software.

Note:

The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK at below 4 MHz, the

frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.

RA2L1 Datasheet

2. Electrical Characteristics

R01DS0385EJ0160 Rev.1.60

Oct 14, 2025

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