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MYX29GL01GS11DPIV2 Datasheet(PDF) 34 Page - Micross Components

Part # MYX29GL01GS11DPIV2
Description  Tin-lead ball metallurgy
PDF  68 Pages
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Manufacturer  MICROSS [Micross Components]
Direct Link  http://www.micross.com
Logo MICROSS - Micross Components

MYX29GL01GS11DPIV2 Datasheet(HTML) 34 Page - Micross Components

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MYX29GL01GS11DPIV2
Revision 1.0 - 01/26/2015
*Advanced information. Subject to change without notice.
34
1Gb GL-S MirrorBit® Eclipse™
Flash Memory
MYX29GL01GS11DPIV2*
Form #: CSI-D-685 Document 001
Table 9: CFI Query Identification String
Word Address
Data
Description
(SA) + 0010h (SA) + 0011h (SA) + 0012h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
(SA) + 0013h
(SA) + 0014h
0002h
0000h
Primary OEM Command Set
(SA) + 0015h
(SA) + 0016h
0040h
0000h
Address for Primary Extended Table
(SA) + 0017h
(SA) + 0018h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
(SA) + 0019h
(SA) + 001Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 10: CFI System Interface String
Word Address
Data
Description
(SA) + 001Bh
0027h
VCC Min. (erase/program) (D7-D4: volts, D3-D0: 100 mV)
(SA) + 001Ch
0036h
VCC Max. (erase/program) (D7-D4: volts, D3-D0: 100 mV)
(SA) + 001Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
(SA) + 001Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
(SA) + 001Fh
0008h
Typical timeout per single word write 2N μs
(SA) + 0020h
0009h
Typical timeout for max multi-byte program, 2N μs (00h = not supported)
(SA) + 0021h
0008h
Typical timeout per individual block erase 2N ms
(SA) + 0022h
0012h (1 Gb)
0011h (512 Mb)
0010h (256 Mb)
000Fh (128 Mb)
Typical timeout for full chip erase 2N ms (00h = not supported)
(SA) + 0023h
0001h
Max. timeout for single word write 2N times typical
(SA) + 0024h
0002h
Max. timeout for buffer write 2N times typical
(SA) + 0025h
0003h
Max. timeout per individual block erase 2N times typical
(SA) + 0026h
0003h
Max. timeout for full chip erase 2N times typical (00h = not supported)



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