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MYX29GL01GS11DPIV2 Datasheet(PDF) 60 Page - Micross Components |
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MYX29GL01GS11DPIV2 Datasheet(HTML) 60 Page - Micross Components |
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60 / 68 page  MYX29GL01GS11DPIV2 Revision 1.0 - 01/26/2015 *Advanced information. Subject to change without notice. 60 1Gb GL-S MirrorBit® Eclipse™ Flash Memory MYX29GL01GS11DPIV2* Form #: CSI-D-685 Document 001 Figure 17: Read to Write (CE# VIL) Operation Timing Diagram October 9, 2013 S29GL_128S_01GS_00_08 GL-S MirrorBit® Family 85 Data She e t Figure 10.11 Write to Read (tCE) Operation Timing Diagram Figure 10.12 Read to Write (CE# VIL) Operation Timing Diagram Amax-A0 CE# OE# WE# DQ15-DQ0 tACC tOE tOEH tCE tDF tDF tOH tOH tOH tAS tAH tDS tDH tWP tCS tCH tSR_W Amax-A0 CE# OE# WE# DQ15-DQ0 tAS tDS tAH tDH tCH tACC tCE tOE tOH tOH tDF tWP tGHWL Figure 18: Read to Write (CE# Toggle) Operation Timing Diagram 86 GL-S MirrorBit® Family S29GL_128S_01GS_00_08 October 9, 2013 D a t a S h e e t Figure 10.13 Read to Write (CE# Toggle) Operation Timing Diagram Notes: 1. Not 100% tested. 2. Upon the rising edge of WE#, must wait tSR/W before switching to another address. 3. See Table 5.4 on page 46 and Table 5.5 on page 47 for specific values. Table 10.8 Erase/Program Operations Parameter Description VIO = 2.7V to VCC VIO = 1.65V to VCC Unit JEDEC Std tWHWH1 tWHWH1 Write Buffer Program Operation Typ (Note 3) µs Effective Write Buffer Program Operation per Word Typ (Note 3) µs Program Operation per Word or Page Typ (Note 3) µs tWHWH2 tWHWH2 Sector Erase Operation (Note 1) Typ (Note 3) ms tBUSY Erase/Program Valid to RY/BY# Delay Max 80 ns tSR/W Latency between Read and Write operations (Note 2) Min 10 ns tESL Erase Suspend Latency Max (Note 3) µs tPSL Program Suspend Latency Max (Note 3) µs tRB RY/BY# Recovery Time Min 0 µs Amax-A0 CE# OE# WE# DQ15-DQ0 tACC tOE tCE tAS tCS tDS tAH tDH tWP tCH tOH tOH tOH tDF tDF tGHWL |
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