MYX29GL01GS11DPIV2 datasheet(35/68 Pages) MICROSS

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MYX29GL01GS11DPIV2

Revision 1.0 - 01/26/2015

*Advanced information. Subject to change without notice.

1Gb GL-S MirrorBit® Eclipse™

Flash Memory

MYX29GL01GS11DPIV2*

Form #: CSI-D-685 Document 001

Table 11: CFI Device Geometry Definition

Word Address

Data

Description

(SA) + 0027h

001Bh (1 Gb)

001Ah (512 Mb)

0019h (256 Mb)

0018h (128 Mb)

Device Size = 2N byte;

(SA) + 0028h

0001h

Flash Device Interface Description 0 = x8-only, 1 = x16-only, 2 = x8/x16 capable

(SA) + 0029h

0000h

(SA) + 002Ah

0009h

Max. number of byte in multi-byte write = 2N (00 = not supported)

(SA) + 002Bh

0000h

(SA) + 002Ch

0001h

Number of Erase Block Regions within device; 1 = Uniform Device, 2 = Boot Device

(SA) + 002Dh

00XXh

EraseBlockRegion1Information(refertoJEDECJESD68-01orJEP137specifications)

00FFh, 0003h, 0000h, 0002h =1 Gb

00FFh, 0001h, 0000h, 0002h = 512 Mb

00FFh, 0000h, 0000h, 0002h = 256 Mb

007Fh, 0000h, 0000h, 0002h = 128 Mb

(SA) + 002Eh

000Xh

(SA) + 002Fh

0000h

(SA) + 0030h

000Xh

(SA) + 0031h

0000h

Erase Block Region 2 Information (refer to CFI publication 100)

(SA) + 0032h

0000h

(SA) + 0033h

0000h

(SA) + 0034h

0000h

(SA) + 0035h

0000h

Erase Block Region 3 Information (refer to CFI publication 100)

(SA) + 0036h

0000h

(SA) + 0037h

0000h

(SA) + 0038h

0000h

(SA) + 0039h

0000h

Erase Block Region 4 Information (refer to CFI publication 100)

(SA) + 003Ah

0000h

(SA) + 003Bh

0000h

(SA) + 003Ch

0000h

(SA) + 003Dh

FFFFh

Reserved

(SA) + 003Eh

FFFFh

Reserved

(SA) + 003Fh

FFFFh

Reserved

MYX29GL01GS11DPIV2 Datasheet(PDF) 35 Page - Micross Components

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