MIMXRT8024DVL4A datasheet(31/103 Pages) NXP

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Table 20. OSC32K main characteristics

Min

Typ

Max

Comments

Fosc

—

32.768 kHz

—

This frequency is nominal and determined mainly by the crystal selected.

32.0 K would work as well.

Current consumption —

4 μA

—

The 4 μA is the consumption of the oscillator alone (OSC32k). Total supply

consumption will depend on what the digital portion of the RTC consumes.

The ring oscillator consumes 1 μA when ring oscillator is inactive, 20 μA

when the ring oscillator is running. Another 1.5 μA is drawn from vdd_rtc in

the power_detect block. So, the total current is 6.5 μA on vdd_rtc when the

ring oscillator is not running.

Bias resistor

—

14 MΩ

—

This integrated bias resistor sets the amplifier into a high gain state. Any

leakage through the ESD network, external board leakage, or even a scope

probe that is significant relative to this value will debias the amp. The

debiasing will result in low gain, and will impact the circuit's ability to start

up and maintain oscillations.

Crystal Properties

Cload

—

10 pF

—

Usually crystals can be purchased tuned for different Cloads. This Cload

value is typically 1/2 of the capacitances realized on the PCB on either side

of the quartz. A higher Cload will decrease oscillation margin, but increases

current oscillating through the crystal.

ESR

—

50 kΩ

100 kΩ Equivalent series resistance of the crystal. Choosing a crystal with a higher

value will decrease the oscillating margin.

4.3 I/O parameters

This section provide parameters on I/O interfaces.

4.3.1 I/O DC parameters

This section includes the DC parameters of the following I/O types:

• XTALI and RTC_XTALI (Clock Inputs) DC Parameters

• General Purpose I/O (GPIO)

• LVDS I/O DC Parameters

The term ‘NVCC_XXXX’ in this section refers to the associated supply rail of an input or output.

NOTE

NXP Semiconductors

Electrical Characteristics

i.MX RT1060X Crossover Processors for Extended Products , Rev. 1, 06/2022

Data Sheet: Technical Data

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