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S32K311NHT0MPAST Datasheet(PDF) 48 Page - NXP Semiconductors

Part # S32K311NHT0MPAST
Description  Automotive General Purpose MCUs
PDF  143 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

S32K311NHT0MPAST Datasheet(HTML) 48 Page - NXP Semiconductors

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Table 15. STANDBY mode supply currents (continued)
S32K312
25, typ 3
40
41
0.887
NA
25, max 4
79
80
1.031
85, typ 3
178
178
1.027
85, max 4
496
497
1.422
105, typ 3
350
346
1.197
105, max 4
994
997
1.924
125, typ 3
620
611
1.457
125, max 4
1788
1792
2.761
S32K311, S32K310 25, typ 3
38.9
39.8
1.365
NA
25, max 4
77.2
79.8
1.823
85, typ 3
144.3
144.9
1.480
85, max 4
491.5
494.8
2.263
105, typ 3
263.8
264.2
1.559
105, max 4
937.4
947.1
2.597
125, typ 3
508.5
510
1.811
125, max 4
1740.1
1760.3
3.488
1. See the configurations in Table 21.
2. IO load current is not included. The actual current requirements for IOs will depend on the I/O configuration in the
application.
3. “typ” is indicative of the average current numbers at the nominal internally regulated V11 supply voltage, VDD_HV_A =
5.0V, VDD_HV_B = 5.0V, for the typical silicon process..
4. “max” is indicative of the maximum current numbers at the maximum internally regulated V11 supply voltage (1.16 V),
VDD_HV_A = 5.5V, VDD_HV_B = 5.5V, for the fast silicon process.
All data in this table is preliminary and based on first samples.
NOTE
Typical current numbers are indicative for typical silicon process and may vary based on the silicon distribution and user
configuration. Typical conditions assumes VDD_HV_A = VREFH = 5 V, VDD_HV_B = 5V (if the VDD_HV_B domain present in the
device), temperature = 25 °C, and typical silicon process unless otherwise stated.
NXP Semiconductors
Power management
S32K3xx Data Sheet, Rev. 9.1, 03/2024
Data Sheet: Technical Data
Preliminary Information for S32K388
48 / 143



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