S32K311NHT0MPAST datasheet(56/143 Pages) NXP

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Table 19. Example RUN mode configuration supply currents for S32K3x8, S32K34x, S32K32x and S32K314 (continued)

85, max 8

363.7

322.1

331.3

299.2

263.2 418.5

552.8

3.2

7.1

105, typ 7

263.5

223.5

233.0

201.5

168.9 360.4

446.1

2.1

6.4

105, max 8

472.4

429.8

438.8

407.1

369.8 516.5

682.8

3.2

7.1

125, typ 7

311.9

271.3

281.0

249.0

216.2 413.8

501.0

2.1

6.7

125, max 8, 9 661.0

618.2

624.6

588.8

554.2 707

844.0

3.2

7.9

S32K344,

S32K324,

S32K314

25, typ 7

119

102

106

0.6

3.1

25, max 8

133

115

119

0.8

3.6

85, typ 7

134

116

120

81.8

0.6

3.2

85, max 8

180

160

165

137

123

0.8

3.9

105, typ 7

145

128

132

105

0.6

3.2

105, max 8

222

203

208

179

165

0.8

4.0

125, typ 7

169

151

155

128

116

0.6

3.3

125, max 8, 9

271

250

256

226

213

0.8

4.5

S32K342,

S32K322,

S32K341

25, typ 7

115.3

93.2

96.1

79.6

64.1

0.5

3.0

25, max 8

128.9

109.3

109.8

90.9

74.5

0.8

3.6

85, typ 7

125.0

102.7

105.8

89.2

73.6

0.5

3.0

85, max 8

178.8

126.5

132.0

105.0

92.5

0.8

3.6

105, typ 7

135.2

111.9

115.5

98.6

83.4

0.5

3.1

105, max 8

219.6

184.6

188.5

168.5

152.5

0.8

3.8

125, typ 7

145.8

123.8

127.3

110.2

94.7

0.5

3.1

125, max 8, 9

258.1

235.2

243.9

206.9

183.7

0.8

4.3

1. Current numbers are for reduced configuration and may vary based on user configuration and silicon process variation.

2. See the configurations in Table 22.

3. RUN IDD @ V15 includes Flash memory read current from the V11 voltage rail.

4. For S32K388, the current from a V15 supply will flow through the external NMOS for the V11 regulation stage, and into the

V11 pins of the device.

5. IO current is not included. The actual current requirements for IOs will depend on the I/O configuration in the application.

6. RUN IDD @ VDD_HV_A includes Flash memory read current from the V25 voltage rail.

7. “typ” is indicative of the average current numbers at the nominal internally regulated V11 supply voltage, VDD_HV_A =

5.0V, VDD_HV_B = 5.0V, V15 = 1.5V, for the typical silicon process.

8. “max” is indicative of the maximum current numbers at the maximum internally regulated V11 supply voltage (1.16 V),

VDD_HV_A = 5.5V, VDD_HV_B = 5.5V, V15 = 1.65V, for the fast silicon process.

9. For the maximum allowable RUN current in an application, the junction temperature must be kept below the maximum

specification, TJ < 150°C, to avoid self-heating.

NXP Semiconductors

Power management

S32K3xx Data Sheet, Rev. 9.1, 03/2024

Data Sheet: Technical Data

Preliminary Information for S32K388

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