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S32K311NHT0MPAST Datasheet(PDF) 76 Page - NXP Semiconductors |
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S32K311NHT0MPAST Datasheet(HTML) 76 Page - NXP Semiconductors |
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76 / 143 page ![]() Table 32. Flash memory AC timing specifications (continued) Symbol Characteristic Min Typical Max Units taistart Time from 0 to 1 transition of UT0[AIE] initiating a Margin Read or Array Integrity until the UT0[AID] bit is cleared. This time also applies to the resuming from a suspend or breakpoint by clearing UT0[AISUS] or clearing UT0[NAIBP] — — 5 ns taistop Time from 1 to 0 transition of UT0[AIE] initiating an Array Integrity abort until the UT0[AID] bit is set. This time also applies to the UT0[AISUS] to UT0[AID] setting in the event of a Array Integrity suspend request. — — 50 system clock periods ns tmrstop Time from 1 to 0 transition of UT0[AIE] initiating a Margin Read abort until the UT0[AID] bit is set. This time also applies to the UT0[AISUS] to UT0[AID] setting in the event of a Margin Read suspend request. — — 26 plus fifteen system clock periods µs 1. For Block Erase, Tdones times may be 3x max spec. 2. In extreme cases (1 block configurations) Tdrcv min may be faster (12uS plus seven system clocks) 9.5 Flash memory read timing parameters Table 33. Flash Read Wait State Settings (S32K344, S32K324, S32K314, S32K342, S32K322, S32K341, S32K312, S32K311 and S32K310) Flash Frequency RWSC setting 250 KHz < Freq ≤ 66 MHz 1 66 MHz < Freq ≤ 100 MHz 2 100 MHz < Freq ≤ 133 MHz 3 133 MHz < Freq ≤ 167 MHz 4 167 MHz < Freq ≤ 200 MHz 5 200 MHz < Freq ≤ 233 MHz 6 233 MHz < Freq ≤ 250 MHz 7 Table 34. Flash Read Wait State Settings (S32K358, S32K348, S32K338, S32K328 and S32K388) Flash Frequency RWSC setting 250 KHz < Freq ≤ 60 MHz 1 60 MHz < Freq ≤ 90 MHz 2 90 MHz < Freq ≤ 120 MHz 3 Table continues on the next page... NXP Semiconductors Flash memory specification S32K3xx Data Sheet, Rev. 9.1, 03/2024 Data Sheet: Technical Data Preliminary Information for S32K388 76 / 143 |
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