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S32K311NHT0MPAST Datasheet(PDF) 73 Page - NXP Semiconductors

Part # S32K311NHT0MPAST
Description  Automotive General Purpose MCUs
PDF  143 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

S32K311NHT0MPAST Datasheet(HTML) 73 Page - NXP Semiconductors

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9.1 Flash memory program and erase specifications
Table 29. Flash memory program and erase specifications
Symbol
Characteristic1
Typ2
Factory
Programming3,4
Field Update
Unit
Initial Max Initial Max,
Full Temp
Typical
End of
Life5
Lifetime Max6
20°C ≤TA
≤30°C
-40°C ≤TJ
≤150°C
-40°C ≤TJ
≤150°C
≤ 1,000
cycles
≤ 100,000
cycles
tdwpgm
Doubleword (64 bits) program time 102
122
129
111
150
µs
tppgm
Page (256 bits) program time
142
171
180
157
200
µs
tqppgm
Quad-page (1024 bits)
program time
314
377
396
341
450
µs
t8kpgm
8 KB Sector program time
20
24
26
22
30
ms
t8kers
8 KB Sector erase time
4.8
8.5
10.6
6.5
30
ms
t256kbers
256KB Block erase time
22.8
27.4
28.8
24.4
40
—
ms
t512kbers
512KB Block erase time
25.4
30.5
32.1
27.9
45
—
ms
t1mbers
1MB Block erase time
30.6
36.8
38.7
33.6
50
—
ms
t2mbers
2MB Block erase time
41.1
49.3
51.8
45.2
60
—
ms
1. Program times are actual hardware programming times and do not include software overhead. Sector program times
assume quad-page programming.
2. Typical program and erase times represent the median performance and assume nominal supply values and operation at
25 °C. Typical program and erase times may be used for throughput calculations.
3. Conditions: ≤ 25 cycles, nominal voltage.
4. Plant Programing times provide guidance for timeout limits used in the factory.
5. Typical End of Life program and erase times represent the median performance and assume nominal supply values.
Typical End of Life program and erase values may be used for throughput calculations.
6. Conditions: -40°C ≤TJ ≤150°C, full spec voltage.
9.2 Flash memory Array Integrity and Margin Read specifications
Table 30. Flash memory Array Integrity and Margin Read specifications
Symbol
Characteristic
Min
Typical
Max1 2
Units3
tai256kseq
Array Integrity time and Margin
Read time for sequential sequence
on 256KB block.
—
—
8192 x Tperiod x Nread
(plus 40uS adder required if User
Margin Read)
—
Table continues on the next page...
NXP Semiconductors
Flash memory specification
S32K3xx Data Sheet, Rev. 9.1, 03/2024
Data Sheet: Technical Data
Preliminary Information for S32K388
73 / 143



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