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JS48F4400P0P3C0 Datasheet(PDF) 38 Page - Numonyx B.V |
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JS48F4400P0P3C0 Datasheet(HTML) 38 Page - Numonyx B.V |
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38 / 139 page ![]() Numonyx™ StrataFlash® Cellular Memory (M18) Datasheet April 2008 38 309823-10 4.6 Signal Descriptions, x16 Split Bus Table 9: Signal Descriptions, x16 Split Bus, Non-Mux (Sheet 1 of 4) Symbol Type Signal Descriptions Notes Address and Data Signals, Non-Mux F-A[MAX:0] Input FLASH ADDRESS: Flash device signals. Dedicated address inputs for Flash memory die during read and write operations. • 2-Gbit: AMAX = A26 • 1-Gbit: AMAX = A25 • 512-Mbit: AMAX = A24 • 256-Mbit: AMAX = A23 • 128-Mbit: AMAX = A22 Unused address inputs are RFU. D-A[MAX:0] Input LPSDRAM ADDRESS: LSPDRAM device signals. Dedicated address inputs for LPSDRAM memory die during read and write operations. • A[12:0] are the row and A[9:0] are the column addresses for 512-Mbit LPSDRAM. • A[12:0] are the row and A[8:0] are the column addresses for 256-Mbit LPSDRAM. • A[11:0] are the row and A[8:0] are the column addresses for 128-Mbit LPSDRAM. Unused address inputs are RFU. F-DQ[15:0] Input/ Output FLASH DATA INPUT/OUTPUTS: Flash device signals. • Inputs Flash data and commands during write cycles. • Outputs data during read cycles. • Data signals are High-Z when the device is deselected or its output is disabled. D-DQ[15:0] Input/ Output LPSDRAM DATA INPUT/OUTPUTS: LPSDRAM device signals. • Inputs LPSDRAM data and commands during write cycles. • Outputs data during read cycles. • Data signals are High-Z when the device is deselected or its output is disabled. Address and Data Signals, A/D Mux F-A[MAX:16] Input ADDRESS: Flash device signals. Shared address inputs for all Flash memory die during Read and Write operations. • 2-Gbit: AMAX = A26 • 1-Gbit: AMAX = A25 • 512-Mbit: AMAX = A24 • 256-Mbit: AMAX = A23 • 128-Mbit: AMAX = A22 Unused address inputs should be treated as RFU. F-ADQ[15:0] Input / Output ADDRESS-DATA MULTIPLEXED INPUTS/ OUTPUTS: AD-Mux flash lower address and data signals; LPSDRAM data signals. During AD-Mux flash Write cycles, ADQ[15:0] are used to input the lower address followed by commands or write-data. During AD-Mux flash Read cycles, ADQ[15:0] are used to input the lower address followed by read-data output. During LPSDRAM accesses, ADQ[15:0] are used to input commands and write-data during Write cycles or to output read-data during Read cycles. During NAND accesses, ADQ[7:0] are used to input commands, address, or write-data, and to output read-data. ADQ[15:0] are High-Z when the flash is deselected or its output is disabled. Control Signals |
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