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JS48F4400P0P3C0 Datasheet(PDF) 68 Page - Numonyx B.V

Part # JS48F4400P0P3C0
Description  StrataFlash짰 Cellular Memory
PDF  139 Pages
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

JS48F4400P0P3C0 Datasheet(HTML) 68 Page - Numonyx B.V

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Numonyx™ StrataFlash® Cellular Memory (M18)
Datasheet
April 2008
68
309823-10
7.4
Program and Erase Characteristics
The M18 device includes specifications for different lithographies, densities, and
frequencies. For additional information on combinations, see Table 4, “M18 Product
Litho/Density/Frequency Combinations” on page 10 in the Section 2.0, “Functional
Description.
Table 24: Program-Erase Characteristics
Nbr.
Symbol
Parameter
VPPL/VPPH
Unit
Notes
Litho (nm)
Density
(Mbit)
Min
Typ
Max
Conventional Word Programming
W200
tPROG/W
Program
Time
Single word (first
word)
—
—
—
115
230
µs
1,2
Single word
(subsequent word)
—
—
—
50
230
Buffered Programming
W200
tPROG/W
Program
Time
Single word
—
—
—
250
500
µs
1
W250
tPROG/PB
One Buffer (512
words)
90
65
256, 512
128, 256, 512,
1024
—
2.15
1.02
4.3
2.05
ms
Buffered Enhanced Factory Programming
W451
tBEFP/W
Program
Time
Single word
90
65
256, 512
128, 256, 512
—
4.2
2.0
—
µs
1,3,4
W452
tBEFP/
Setup
Buffered EFP Setup
—
—
5
—
—
1
Erasing and Suspending
W501
tERS/MAB
Erase
Time
128-Kword Main
Array Block
——
—
0.9
4
s
1
W600
tSUSP/P
Suspen
d
Latency
Program suspend
—
—
—
20
30
µs
1
W601
tSUSP/E
Erase suspend
—
—
—
20
30
1
Blank Check
W702
tBC/MB
Blank
Check
Main array block
—
—
—
3.2
—
ms
1
Notes:
1.
Typical values measured at TC = +25 °C and nominal voltages. Performance numbers are valid for all speed versions.
Sampled, but not 100% tested.
2.
First and subsequent words refer to first word and subsequent words in Control Mode programming region.
3.
Averaged over entire device.
4.
BEFP not validated at VPPL.



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