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RA4C1 Datasheet(PDF) 51 Page - Renesas Technology Corp |
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RA4C1 Datasheet(HTML) 51 Page - Renesas Technology Corp |
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51 / 97 page ![]() SDAn SCLn VIH VIL P*1 S*1 tSf tSr tSDAH tSDAS tSP P*1 Test conditions: VIH = VCC × 0.7, VIL = VCC × 0.3 VOL = 0.6 V, IOL = 6 mA Sr*1 Note: n = 0, 1, 3 to 5, 9 Note 1. S, P, and Sr indicate the following conditions: S: Start condition P: Stop condition Sr: Restart condition Figure 2.31 SCI simple IIC mode timing 2.3.9 SPI Timing Table 2.40 SPI timing (1 of 3) Parameter Symbol Min Max Unit Test conditions RSPCK clock cycle Master 2.7 V ≤ VCC ≤ 3.6 V tSPcyc*1 50 — ns Figure 2.32 C = 30 pF 2.4 V ≤ VCC < 2.7 V 100 — 1.8 V ≤ VCC < 2.4 V 200 — 1.6 V ≤ VCC < 1.8 V 500 — Slave 2.7 V ≤ VCC ≤ 3.6 V 100 — 2.4 V ≤ VCC < 2.7 V 200 — 1.8 V ≤ VCC < 2.4 V 400 — 1.6 V ≤ VCC < 1.8 V 1500 — RSPCK clock high pulse width Master tSPCKWH (tSPcyc – tSPCKr – tSPCKf) / 2 – 3 — ns Slave 0.4 × tSPcyc 0.6 × tSPcyc RSPCK clock low pulse width Master tSPCKWL (tSPcyc – tSPCKr – tSPCKf) / 2 – 3 — ns Slave 0.4 × tSPcyc 0.6 × tSPcyc RSPCK clock rise and fall time Output 2.7 V ≤ VCC ≤ 3.6 V tSPCKr, tSPCKf — 10 ns 2.4 V ≤ VCC < 2.7 V — 15 1.8 V ≤ VCC ≤ 2.4 V — 20 1.6 V ≤ VCC < 1.8 V — 30 Input — 1 µs RA4C1 Datasheet 2. Electrical Characteristics R01DS0457EJ0110 Rev.1.10 Jul 4, 2025 Page 51 of 97 |
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