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JS48F4400P0P3C0 Datasheet(PDF) 133 Page - Numonyx B.V

Part # JS48F4400P0P3C0
Description  StrataFlash짰 Cellular Memory
PDF  139 Pages
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

JS48F4400P0P3C0 Datasheet(HTML) 133 Page - Numonyx B.V

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April 2008
Datasheet
309823-10
133
Numonyx™ StrataFlash® Cellular Memory (M18)
A.3.3
Synchronous Read and Write Cycles
Just as asynchronous bus cycles, synchronous bus cycles (RCR[15] = ‘0b) can have
one or two address cycles. If the are two address cycles, the upper address must be
latched first with OE# at VIL followed by the lower address with OE# at VIH. If there is
only one address cycle, only the lower address will be latched and the previously
latched upper address applies. For reads, sensing begins when the lower address is
latched, but for synchronous reads, addresses are latched on a rising clock CLK instead
of a rising ADV# edge.
For synchronous bus cycles with two address cycles, it is not necessary to de-assert
ADV# between the two address cycles. This allows both the upper and lower address to
be latched in only two clock periods.
A.3.3.1
Synchronous Read Cycles
For synchronous read specifications, refer to Table 65, “AADM Synchronous Timings” on
page 133. For synchronous read timing diagrams, refer to the following:
• Figure 65, “AADM Sync Burst Read Cycle (ADV# De-asserted between Address
Cycles)” on page 134
• Figure 66, “AADM Sync Burst Read Cycle (ADV# Not De-asserted between Address
Cycles)” on page 134
• Figure 67, “AADM Sync Burst Read Cycle (Latching A[15:0] only)” on page 135
Notes:
1.
The device must operate down to 9.6MHz in synchronous burst mode.
2.
During the address capture phase of a read burst bus cycle, OE# timings relative to CLK shall be identical to those of
ADV# relative to CLK.
3.
In synchronous burst read cycles, the asynchronous OE# to ADV# setup and hold times must also be met (Tghvh & Tvhgl)
to signify that the address capture phase of the bus cycle is complete.
4.
To prevent A/D bus contention between the host and the memory device, OE# may only be asserted low after the host has
satisfied the ADDR hold spec, Tchax.
5.
Rise and fall time specified between Vil & Vih
6.
A read cycle may only be terminated (prior to the completion of sensing data) one time before a full bus cycle must be
allowed to complete.
Table 65: AADM Synchronous Timings
Num
Sym
Target (104 MHz)
(108MHz)
Notes
(3)
Num
Sym
Target (104 MHz)
(108MHz)
Notes
(3)
Min (nS)
Max (nS)
Min (nS)
Max (nS)
R201
tCLK
9
See note
1
R311
tCHVL
2.5
R203
tRISE/FALL
1.5
5
R312
tCHTX
2
R301
tAVCH
3
R313
tCHVH
22
R302
tVLCH
3
2
R314
tCHGL
2.5
4
R303
tELCH
3.5
R316
tVLVH
tCLK
2*tCLK
R304
tCHQV
7
R317
tVHCH
3
R305
tCHQX
2
R318
tCHGH
2
R306
tCHAX
5
4
R319
tGHCH
3
R307
tCHTV
7
R320
tGLCH
3



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