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JS48F4400P0P3C0 Datasheet(PDF) 112 Page - Numonyx B.V

Part # JS48F4400P0P3C0
Description  StrataFlash짰 Cellular Memory
PDF  139 Pages
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

JS48F4400P0P3C0 Datasheet(HTML) 112 Page - Numonyx B.V

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Numonyx™ StrataFlash® Cellular Memory (M18)
Datasheet
April 2008
112
309823-10
13h
2
Primary vendor command set and control interface ID code.
16-bit ID code for vendor-specified algorithms.
13
--00
14
--02
15h
2
Extended Query Table primary algorithm address.
15
--0A
16
--01
17h
2
Alternate vendor command set and control interface ID code.
0000h means no second vendor-specified algorithm exists.
17
--00
18
--00
19h
2
Secondary algorithm Extended Query Table address. 0000h
means none exists.
19
--00
1A
--00
Table 52: CFI Identification (Sheet 2 of 2)
Offset
Length
Description
Address
Hex Code
Value
Table 53: System Interface Information (Sheet 1 of 2)
Offset
Length
Description
Address
Hex Code
Value
1Bh
1
VCC logic supply minimum
program/erase voltage.
bits 0-3 BCD 100 mV
bits 4-7 BCD volts
1B
--17
1.7 V
1Ch
1
VCC logic supply maximum
program/erase voltage.
bits 0-3 BCD 100 mV
bits 4-7 BCD volts
1C
--20
2.0 V
1Dh
1
VPP [programming] supply
minimum program/erase voltage.
bits 0-3 BCD 100 mV
bits 4-7 hex volts
1D
--85
8.5 V
1Eh
1
VPP [programming] supply
maximum program/erase
voltage.
bits 0-3 BCD 100 mV
bits 4-7 hex volts
1E
--95
9.5 V
1Fh
1
“n” such that typical single word
program timeout = 2n µs.
1F
--06
64 µs
20h
1
“n” such that typical full buffer
write timeout = 2n µs.
20
--0B (256, 512 Mbit - 90 nm;
1024 Mbit - 65 nm)
--0A (128. 256, 512 Mbit -
65 nm)
2048 µs (256, 512 Mbit -
90 nm; 1024 Mbit - 65
nm)
1024 µs (128. 256, 512
Mbit - 65 nm)
21h
1
“n” such that typical block erase
timeout = 2n ms.
21
--0A
1 s
22h
1
“n” such that typical full chip
erase timeout = 2n ms.
22
--00
NA
23h
1
“n” such that maximum word
program timeout = 2n times
typical.
23
--02
256 µs



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