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JS48F4400P0P3C0 Datasheet(PDF) 112 Page - Numonyx B.V |
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JS48F4400P0P3C0 Datasheet(HTML) 112 Page - Numonyx B.V |
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112 / 139 page ![]() Numonyx™ StrataFlash® Cellular Memory (M18) Datasheet April 2008 112 309823-10 13h 2 Primary vendor command set and control interface ID code. 16-bit ID code for vendor-specified algorithms. 13 --00 14 --02 15h 2 Extended Query Table primary algorithm address. 15 --0A 16 --01 17h 2 Alternate vendor command set and control interface ID code. 0000h means no second vendor-specified algorithm exists. 17 --00 18 --00 19h 2 Secondary algorithm Extended Query Table address. 0000h means none exists. 19 --00 1A --00 Table 52: CFI Identification (Sheet 2 of 2) Offset Length Description Address Hex Code Value Table 53: System Interface Information (Sheet 1 of 2) Offset Length Description Address Hex Code Value 1Bh 1 VCC logic supply minimum program/erase voltage. bits 0-3 BCD 100 mV bits 4-7 BCD volts 1B --17 1.7 V 1Ch 1 VCC logic supply maximum program/erase voltage. bits 0-3 BCD 100 mV bits 4-7 BCD volts 1C --20 2.0 V 1Dh 1 VPP [programming] supply minimum program/erase voltage. bits 0-3 BCD 100 mV bits 4-7 hex volts 1D --85 8.5 V 1Eh 1 VPP [programming] supply maximum program/erase voltage. bits 0-3 BCD 100 mV bits 4-7 hex volts 1E --95 9.5 V 1Fh 1 “n” such that typical single word program timeout = 2n µs. 1F --06 64 µs 20h 1 “n” such that typical full buffer write timeout = 2n µs. 20 --0B (256, 512 Mbit - 90 nm; 1024 Mbit - 65 nm) --0A (128. 256, 512 Mbit - 65 nm) 2048 µs (256, 512 Mbit - 90 nm; 1024 Mbit - 65 nm) 1024 µs (128. 256, 512 Mbit - 65 nm) 21h 1 “n” such that typical block erase timeout = 2n ms. 21 --0A 1 s 22h 1 “n” such that typical full chip erase timeout = 2n ms. 22 --00 NA 23h 1 “n” such that maximum word program timeout = 2n times typical. 23 --02 256 µs |
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