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JS48F4400P0P3C0 Datasheet(PDF) 113 Page - Numonyx B.V |
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JS48F4400P0P3C0 Datasheet(HTML) 113 Page - Numonyx B.V |
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113 / 139 page ![]() April 2008 Datasheet 309823-10 113 Numonyx™ StrataFlash® Cellular Memory (M18) 12.4 Device Geometry Definition 24h 1 “n” such that maximum buffer write timeout = 2n times typical. 24 --02 (256, 512 Mbit - 90 nm; 128, 256, 512 Mbit - 65 nm) --01 (1024 Mbit - 65 nm) 8192 µs (256, 512 Mbit - 90 nm; 128, 256, 512 Mbit - 65 nm) 4096 µs (1024 Mbit - 65 nm) 25h 1 “n” such that maximum block erase timeout = 2n times typical. 25 --02 4 s 26h 1 “n” such that maximum chip erase timeout = 2n times typical. 26 --00 NA Table 53: System Interface Information (Sheet 2 of 2) Offset Length Description Address Hex Code Value Table 54: Device Geometry Definition Offset Length Description Address Hex Code Value 27h 1 n such that device size in bytes = 2n.27: Flash device interface code assignment: n such that n + 1 specifies the bit field that represents the flash device width capabilities as described here: Table 55, “Device Geometry Definition: Addr, Hex Code, Value” on page 114 76543210 28h 2 ———— x64 x32 x16 x8 28: --01 x16 15 14 13 12 11 10 9 8 ———————— 29: --00 2Ah 2 n such that maximum number of bytes in write buffer = 2n. 2A: 2B: --0A --00 1024 2Ch 1 Number of erase block regions (x) within the device: 1) x = 0 means no erase blocking; the device erases in bulk. 2) x specifies the number of device regions with one or more contiguous, same-size erase blocks. 3) Symmetrically blocked partitions have one blocking region. 2C: Table 55, “Device Geometry Definition: Addr, Hex Code, Value” on page 114 2Dh 4 Erase block region 1 information: bits 0 - 15 = y, y + 1 = number of identical-size erase blocks. bits 16 - 31 = z, region erase block(s) size are z x 256 bytes. 2D: 2E: 2F: 30: 31h 4 Reserved for future erase block region information. 31: 32: 33: 34: 35h 4 Reserved for future erase block region information. 35: 36: 37: 38: |
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